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| 001 | 826578 | ||
| 005 | 20240712084519.0 | ||
| 024 | 7 | _ | |a 10.7567/JJAP.56.022302 |2 doi |
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| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Pomaska, Manuel |0 P:(DE-Juel1)162141 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Wide gap microcrystalline silicon carbide emitter for amorphous silicon oxide passivated heterojunction solar cells |
| 260 | _ | _ | |a Bristol |c 2017 |b IOP Publ. |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a Wide gap n-type microcrystalline silicon carbide [μc-SiC:H(n)] is highly suitable as window layer material for silicon heterojunction (SHJ) solar cellsdue to its high optical transparency combined with high electrical conductivity. However, the hot wire chemical vapor deposition (HWCVD) of highlycrystalline μc-SiC:H(n) requires a high hydrogen radical density in the gas phase that gives rise to strong deterioration of the intrinsic amorphoussilicon oxide [a-SiOx:H(i)] surface passivation. Introducing an n-type microcrystalline silicon oxide [μc-SiOx:H(n)] protection layer between theμc-SiC:H(n) and the a-SiOx:H(i) prevents the deterioration of the passivation by providing an etch resistance and by blocking the diffusion ofhydrogen radicals. We fabricated solar cells with μc-SiC:H(n)/μc-SiOx:H(n)/a-SiOx:H(i) stack for the front side and varied the μc-SiOx:H(n) materialproperties by changing the microstructure of the μc-SiOx:H(n) to evaluate the potential of such stack implemented in SHJ solar cells and to identifythe limiting parameters of the protection layer in the device. With this approach we achieved a maximum open circuit voltage of 677mV and amaximum energy conversion efficiency of 18.9% for a planar solar cell. |
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| 773 | _ | _ | |a 10.7567/JJAP.56.022302 |0 PERI:(DE-600)2006801-3 |n 2 |p 022302 |t Japanese journal of applied physics |v 56 |y 2017 |x 0021-4922 |
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