Contribution to a conference proceedings

FZJ-2017-00838

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Highly reliable long-term operation of AlGaN/GaN/AlN HFETs grown on silver substrate

Fox, A.FZJ* ; Mikulics, M. (Corresponding author)FZJ* ; Marso, M. ; Kocan, M. ; Sofer, Z. ; Kordos, P. ; Luth, H.FZJ* ; Schubert, J.FZJ* ; Grutzmacher, D.FZJ* ; Hardtdegen, H.FZJ*

2016
IEEE

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Please use a persistent id in citations: doi:10.1109/ASDAM.2016.7805896

Abstract: We developed a novel "combined" two-step epitaxial procedure based on MO VP E and MB E for an optimized growth of group III-nitride layers on silver-metallic substrates. The AlGaN/GaN/AlN heterostructures were used for the fabrication of HFETs. The electrical properties as well as the long-term operation properties were systematically studied and compared with conventional devices. The improved heat dissipation in heterostructures deposited directly on a silver substrate leads to a significant decrease in channel temperature (−60% at 7W/mm) and affects the long term stability of the drain current (± 2%) favorably in the whole range under investigation (up to ∼1000 hours) compared with conventional AlGaN/GaN layers grown on sapphire substrates. The results presented demonstrate the great potential of the novel material-device concept.

Note: ISBN 978-1-5090-3083-5

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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