Contribution to a conference proceedings

FZJ-2017-00839

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png InGaN mesoscopic structures for low energy consumption nano-opto-electronics

Luth, H.FZJ* ; Mikulics, M. (Corresponding author)FZJ* ; Winden, A.FZJ* ; Trellenkamp, S.PGI-8-PT* ; Sofer, Z. ; Marso, M. ; Grutzmacher, D.FZJ* ; Hardtdegen, H.FZJ*

2016
IEEE

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Please use a persistent id in citations: doi:10.1109/ASDAM.2016.7805897

Abstract: Nano-LEDs based on mesoscopic structures are the key elements for future energy saving nano-opto-electronics as well as for fast and highly secure optical communication. We present first results using a vertical device layout in which nano-LED emitters based on InGaN mesoscopic structures deposited by metalorganic vapor phase epitaxy (MOVPE) were implemented. The nano-LEDs were integrated in a vertical device layout without degradation of their optical and electrical properties. The results presented demonstrate the great promise of the novel device concept and integration technology for low energy consumption nano-opto-electronics operated in the telecommunication wavelength range.

Note: ISBN 978-1-5090-3083-5

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. PGI-8-PT (PGI-8-PT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
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