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@INPROCEEDINGS{Hardtdegen:826622,
      author       = {Hardtdegen, H. and Mikulics, M.},
      title        = {{T}owards {III}-nitride nano-{LED} based single photon
                      emitters: {T}echnology and applications},
      publisher    = {IEEE},
      reportid     = {FZJ-2017-00841},
      pages        = {27-32},
      year         = {2016},
      note         = {ISBN 978-1-5090-3083-5},
      abstract     = {Three alternative device concepts for single photon
                      emitters based on III-nitride nano-LEDs are introduced,
                      their technology reported and the applications they are
                      suitable for presented. The first concept is a vertical
                      device concept and is based on mesoscopic sized (InGa)N
                      nano-pyramids prepared by bottom-up selective area
                      metalorganic vapor phase epitaxy. The emission of the
                      emitters is controlled by the composition of the
                      nano-pyramids and their size and can be tuned to the
                      telecommunication wavelength range useable for highly secure
                      data communication. Furthermore, a hybrid device platform
                      was devised which consisted of a top-down etched nano-LED
                      and a mesoscopic sized nanocrystal. The primary emission of
                      the LED is used to induce emission from the crystal. The
                      emission is tunable by the crystal's band gap together with
                      its diameter for crystal sizes at which quantum confinement
                      effects are to be expected. Beside the high device
                      efficiency, the broad range of emission wavelengths
                      achievable characterizes this approach. The third approach
                      employs the top-down formed nano-LED photon emitters for
                      lithography. Here, the emission energy of the emitter is
                      utilized to induce the chemical reaction in the photo resist
                      chosen. Ultimately, only one photon is needed to change one
                      chemical bond. This would then allow a scaling of
                      lithography down to the molecular size. All three photon
                      emitters were integrated into high frequency layouts
                      suitable for DC and HF characterization/operation.},
      month         = {Nov},
      date          = {2016-11-13},
      organization  = {2016 11th International Conference on
                       Advanced Semiconductor Devices $\&$
                       Microsystems (ASDAM), Smolenice
                       (Slovakia), 13 Nov 2016 - 16 Nov 2016},
      cin          = {PGI-9 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)8},
      doi          = {10.1109/ASDAM.2016.7805887},
      url          = {https://juser.fz-juelich.de/record/826622},
}