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@INPROCEEDINGS{Hardtdegen:826622,
author = {Hardtdegen, H. and Mikulics, M.},
title = {{T}owards {III}-nitride nano-{LED} based single photon
emitters: {T}echnology and applications},
publisher = {IEEE},
reportid = {FZJ-2017-00841},
pages = {27-32},
year = {2016},
note = {ISBN 978-1-5090-3083-5},
abstract = {Three alternative device concepts for single photon
emitters based on III-nitride nano-LEDs are introduced,
their technology reported and the applications they are
suitable for presented. The first concept is a vertical
device concept and is based on mesoscopic sized (InGa)N
nano-pyramids prepared by bottom-up selective area
metalorganic vapor phase epitaxy. The emission of the
emitters is controlled by the composition of the
nano-pyramids and their size and can be tuned to the
telecommunication wavelength range useable for highly secure
data communication. Furthermore, a hybrid device platform
was devised which consisted of a top-down etched nano-LED
and a mesoscopic sized nanocrystal. The primary emission of
the LED is used to induce emission from the crystal. The
emission is tunable by the crystal's band gap together with
its diameter for crystal sizes at which quantum confinement
effects are to be expected. Beside the high device
efficiency, the broad range of emission wavelengths
achievable characterizes this approach. The third approach
employs the top-down formed nano-LED photon emitters for
lithography. Here, the emission energy of the emitter is
utilized to induce the chemical reaction in the photo resist
chosen. Ultimately, only one photon is needed to change one
chemical bond. This would then allow a scaling of
lithography down to the molecular size. All three photon
emitters were integrated into high frequency layouts
suitable for DC and HF characterization/operation.},
month = {Nov},
date = {2016-11-13},
organization = {2016 11th International Conference on
Advanced Semiconductor Devices $\&$
Microsystems (ASDAM), Smolenice
(Slovakia), 13 Nov 2016 - 16 Nov 2016},
cin = {PGI-9 / JARA-FIT},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)8},
doi = {10.1109/ASDAM.2016.7805887},
url = {https://juser.fz-juelich.de/record/826622},
}