Contribution to a conference proceedings/Contribution to a book

FZJ-2017-00843

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electrical and optical characterization of freestanding Ge1Sb2Te4 nano-membranes integrated in coplanar strip lines

Mikulics, M. (Corresponding author)FZJ* ; Marso, M. ; Adam, R.FZJ* ; Schuck, M.FZJ* ; Fox, A.FZJ* ; Sobolewski, R. ; Kordos, P. ; Luth, H.FZJ* ; Grutzmacher, D.FZJ* ; Hardtdegen, H.FZJ*

2016
IEEE

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Please use a persistent id in citations: doi:10.1109/ASDAM.2016.7805898

Abstract: We developed a transfer and integration technique for freestanding Ge1Sb2Te4 nano-membranes. A so-called laser micro annealing process for the precisely-local formation of low resistance Ge1Sb2Te4/Ti/Au ohmic contacts was optimized. Ultrafast switching effects were studied on nano-membrane devices after their implementation into a group III-nitride based optoelectronic circuit. Highly resistive switching was observed without any noticeable structural deterioration. Charge transport measurements indicate that current densities exhibit values in the "READ resp. SET/RESET" regime from 10-6 down to 10-11A/μm3 after ~100 switching cycles. Our study on freestanding Ge1Sb2Te4 nano-membranes contributes to a better understanding of charge transport related physical phenomena in novel chalcogenide material systems with high potential for future low energy consumption data storage devices.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Elektronische Eigenschaften (PGI-6)

Research Program(s):

1. 523 - Controlling Configuration-Based Phenomena (POF3-523) (POF3-523)

Appears in the scientific report 2016

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