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@ARTICLE{Hsiao:826802,
      author       = {Hsiao, F.-M. and Schnedler, M. and Portz, V. and Huang,
                      Y.-C. and Huang, B.-C. and Shih, M.-C. and Chang, C.-W. and
                      Tu, L.-W. and Eisele, H. and Dunin-Borkowski, Rafal and
                      Ebert, Ph. and Chiu, Y.-P.},
      title        = {{P}robing defect states in polycrystalline {G}a{N} grown on
                      {S}i(111) by sub-bandgap laser-excited scanning tunneling
                      spectroscopy},
      journal      = {Journal of applied physics},
      volume       = {121},
      number       = {1},
      issn         = {1089-7550},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2017-01019},
      pages        = {015701 -},
      year         = {2017},
      abstract     = {We demonstrate the potential of sub-bandgap laser-excited
                      cross-sectional scanning tunneling microscopy and
                      spectroscopy to investigate the presence of defect states in
                      semiconductors. The characterization method is illustrated
                      on GaN layers grown on Si(111) substrates without
                      intentional buffer layers. According to high-resolution
                      transmission electron microscopy and cathodoluminescence
                      spectroscopy, the GaN layers consist of nanoscale wurtzite
                      and zincblende crystallites with varying crystal
                      orientations and hence contain high defect state densities.
                      In order to discriminate between band-to-band excitation and
                      defect state excitations, we use sub-bandgap laser
                      excitation. We probe a clear increase in the tunnel current
                      at positive sample voltages during sub-bandgap laser
                      illumination for the GaN layer with high defect density, but
                      no effect is found for high quality GaN epitaxial layers.
                      This demonstrates the excitation of free charge carriers at
                      defect states. Thus, sub-bandgap laser-excited scanning
                      tunneling spectroscopy is a powerful complimentary
                      characterization tool for defect states.INTRODUCTION},
      cin          = {PGI-5 / ER-C-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-5-20110106 / I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {141 - Controlling Electron Charge-Based Phenomena
                      (POF3-141) / 143 - Controlling Configuration-Based Phenomena
                      (POF3-143)},
      pid          = {G:(DE-HGF)POF3-141 / G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000392839400055},
      doi          = {10.1063/1.4972563},
      url          = {https://juser.fz-juelich.de/record/826802},
}