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@ARTICLE{Duchamp:827049,
      author       = {Duchamp, Martial and Migunov, Vadim and Tavabi, Amir
                      Hossein and Mehonic, A. and Buckwell, M. and Munde, M. and
                      Kenyon, A. J. and Dunin-Borkowski, Rafal},
      title        = {{I}n situ transmission electron microscopy of resistive
                      switching in thin silicon oxide layers},
      journal      = {Resolution and discovery},
      volume       = {1},
      number       = {1},
      issn         = {2498-8707},
      address      = {Budapest},
      publisher    = {Akadémiai Kiadó},
      reportid     = {FZJ-2017-01255},
      pages        = {27 - 33},
      year         = {2016},
      abstract     = {Silicon oxide-based resistive switching devices show great
                      potential for applications in nonvolatile random access
                      memories. We expose a device to voltages above hard
                      breakdown and show that hard oxide breakdown results in
                      mixing of the SiOx layer and the TiN lower contact layers.
                      We switch a similar device at sub-breakdown fields in situ
                      in the transmission electron microscope (TEM) using a
                      movable probe and study the diffusion mechanism that leads
                      to resistance switching. By recording bright-field (BF) TEM
                      movies while switching the device, we observe the creation
                      of a filament that is correlated with a change in
                      conductivity of the SiOx layer. We also examine a device
                      prepared on a microfabricated chip and show that variations
                      in electrostatic potential in the SiOx layer can be recorded
                      using off-axis electron holography as the sample is switched
                      in situ in the TEM. Taken together, the visualization of
                      compositional changes in ex situ stressed samples and the
                      simultaneous observation of BF TEM contrast variations, a
                      conductivity increase, and a potential drop across the
                      dielectric layer in in situ switched devices allow us to
                      conclude that nucleation of the electroforming—switching
                      process starts at the interface between the SiOx layer and
                      the lower contact.},
      cin          = {PGI-5 / ER-C-1},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-5-20110106 / I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.1556/2051.2016.00036},
      url          = {https://juser.fz-juelich.de/record/827049},
}