%0 Journal Article
%A Lu, Jing
%A DiNezza, Michael J.
%A Zhao, Xin-Hao
%A Liu, Shi
%A Zhang, Yong-Hang
%A Kovacs, Andras
%A Dunin-Borkowski, Rafal
%A Smith, David J.
%T Towards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates
%J Journal of crystal growth
%V 439
%@ 0022-0248
%C Amsterdam [u.a.]
%I Elsevier
%M FZJ-2017-01276
%P 99 - 103
%D 2016
%X A series of three CdTe/MgxCd1−xTe (x~0.24) double heterostructures grown by molecular beam epitaxy on InSb (001) substrates at temperatures in the range of 235–295 °C have been studied using conventional and advanced electron microscopy techniques. Defect analysis based on bright-field electron micrographs indicates that the structure grown at 265 °C has the best structural quality of the series, while structures grown at 30 °C lower or higher temperature show highly defective morphology. Geometric phase analysis of the CdTe/InSb interface for the sample grown at 265 °C reveals minimal interfacial elastic strain, and there is no visible evidence of interfacial defect formation in aberration-corrected electron micrographs of this particular sample. Such high quality CdTe epitaxial layers should provide the basis for applications such as photo-detectors and multi-junction solar cells.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000370025300016
%R 10.1016/j.jcrysgro.2016.01.015
%U https://juser.fz-juelich.de/record/827070