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000827070 1001_ $$0P:(DE-HGF)0$$aLu, Jing$$b0$$eCorresponding author
000827070 245__ $$aTowards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates
000827070 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2016
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000827070 520__ $$aA series of three CdTe/MgxCd1−xTe (x~0.24) double heterostructures grown by molecular beam epitaxy on InSb (001) substrates at temperatures in the range of 235–295 °C have been studied using conventional and advanced electron microscopy techniques. Defect analysis based on bright-field electron micrographs indicates that the structure grown at 265 °C has the best structural quality of the series, while structures grown at 30 °C lower or higher temperature show highly defective morphology. Geometric phase analysis of the CdTe/InSb interface for the sample grown at 265 °C reveals minimal interfacial elastic strain, and there is no visible evidence of interfacial defect formation in aberration-corrected electron micrographs of this particular sample. Such high quality CdTe epitaxial layers should provide the basis for applications such as photo-detectors and multi-junction solar cells.
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000827070 7001_ $$0P:(DE-HGF)0$$aDiNezza, Michael J.$$b1
000827070 7001_ $$0P:(DE-HGF)0$$aZhao, Xin-Hao$$b2
000827070 7001_ $$0P:(DE-HGF)0$$aLiu, Shi$$b3
000827070 7001_ $$0P:(DE-HGF)0$$aZhang, Yong-Hang$$b4
000827070 7001_ $$0P:(DE-Juel1)144926$$aKovacs, Andras$$b5
000827070 7001_ $$0P:(DE-Juel1)144121$$aDunin-Borkowski, Rafal$$b6
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000827070 773__ $$0PERI:(DE-600)1466514-1$$a10.1016/j.jcrysgro.2016.01.015$$gVol. 439, p. 99 - 103$$p99 - 103$$tJournal of crystal growth$$v439$$x0022-0248$$y2016
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