TY  - JOUR
AU  - Lu, Jing
AU  - DiNezza, Michael J.
AU  - Zhao, Xin-Hao
AU  - Liu, Shi
AU  - Zhang, Yong-Hang
AU  - Kovacs, Andras
AU  - Dunin-Borkowski, Rafal
AU  - Smith, David J.
TI  - Towards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates
JO  - Journal of crystal growth
VL  - 439
SN  - 0022-0248
CY  - Amsterdam [u.a.]
PB  - Elsevier
M1  - FZJ-2017-01276
SP  - 99 - 103
PY  - 2016
AB  - A series of three CdTe/MgxCd1−xTe (x~0.24) double heterostructures grown by molecular beam epitaxy on InSb (001) substrates at temperatures in the range of 235–295 °C have been studied using conventional and advanced electron microscopy techniques. Defect analysis based on bright-field electron micrographs indicates that the structure grown at 265 °C has the best structural quality of the series, while structures grown at 30 °C lower or higher temperature show highly defective morphology. Geometric phase analysis of the CdTe/InSb interface for the sample grown at 265 °C reveals minimal interfacial elastic strain, and there is no visible evidence of interfacial defect formation in aberration-corrected electron micrographs of this particular sample. Such high quality CdTe epitaxial layers should provide the basis for applications such as photo-detectors and multi-junction solar cells.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000370025300016
DO  - DOI:10.1016/j.jcrysgro.2016.01.015
UR  - https://juser.fz-juelich.de/record/827070
ER  -