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@ARTICLE{Lu:827070,
      author       = {Lu, Jing and DiNezza, Michael J. and Zhao, Xin-Hao and Liu,
                      Shi and Zhang, Yong-Hang and Kovacs, Andras and
                      Dunin-Borkowski, Rafal and Smith, David J.},
      title        = {{T}owards defect-free epitaxial {C}d{T}e and {M}g{C}d{T}e
                      layers grown on {I}n{S}b (001) substrates},
      journal      = {Journal of crystal growth},
      volume       = {439},
      issn         = {0022-0248},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2017-01276},
      pages        = {99 - 103},
      year         = {2016},
      abstract     = {A series of three CdTe/MgxCd1−xTe (x~0.24) double
                      heterostructures grown by molecular beam epitaxy on InSb
                      (001) substrates at temperatures in the range of 235–295
                      °C have been studied using conventional and advanced
                      electron microscopy techniques. Defect analysis based on
                      bright-field electron micrographs indicates that the
                      structure grown at 265 °C has the best structural quality
                      of the series, while structures grown at 30 °C lower or
                      higher temperature show highly defective morphology.
                      Geometric phase analysis of the CdTe/InSb interface for the
                      sample grown at 265 °C reveals minimal interfacial elastic
                      strain, and there is no visible evidence of interfacial
                      defect formation in aberration-corrected electron
                      micrographs of this particular sample. Such high quality
                      CdTe epitaxial layers should provide the basis for
                      applications such as photo-detectors and multi-junction
                      solar cells.},
      cin          = {PGI-5 / ER-C-1},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-5-20110106 / I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000370025300016},
      doi          = {10.1016/j.jcrysgro.2016.01.015},
      url          = {https://juser.fz-juelich.de/record/827070},
}