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| Hauptseite > Publikationsdatenbank > Towards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates > print |
| Hauptseite > Publikationsdatenbank > Towards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates > print |
| 001 | 827070 | ||
| 005 | 20240610120528.0 | ||
| 024 | 7 | _ | |2 doi |a 10.1016/j.jcrysgro.2016.01.015 |
| 024 | 7 | _ | |2 ISSN |a 0022-0248 |
| 024 | 7 | _ | |2 ISSN |a 1873-5002 |
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| 037 | _ | _ | |a FZJ-2017-01276 |
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| 100 | 1 | _ | |0 P:(DE-HGF)0 |a Lu, Jing |b 0 |e Corresponding author |
| 245 | _ | _ | |a Towards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates |
| 260 | _ | _ | |a Amsterdam [u.a.] |b Elsevier |c 2016 |
| 336 | 7 | _ | |2 DRIVER |a article |
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| 520 | _ | _ | |a A series of three CdTe/MgxCd1−xTe (x~0.24) double heterostructures grown by molecular beam epitaxy on InSb (001) substrates at temperatures in the range of 235–295 °C have been studied using conventional and advanced electron microscopy techniques. Defect analysis based on bright-field electron micrographs indicates that the structure grown at 265 °C has the best structural quality of the series, while structures grown at 30 °C lower or higher temperature show highly defective morphology. Geometric phase analysis of the CdTe/InSb interface for the sample grown at 265 °C reveals minimal interfacial elastic strain, and there is no visible evidence of interfacial defect formation in aberration-corrected electron micrographs of this particular sample. Such high quality CdTe epitaxial layers should provide the basis for applications such as photo-detectors and multi-junction solar cells. |
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| 700 | 1 | _ | |0 P:(DE-HGF)0 |a DiNezza, Michael J. |b 1 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Zhao, Xin-Hao |b 2 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Liu, Shi |b 3 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Zhang, Yong-Hang |b 4 |
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| 773 | _ | _ | |0 PERI:(DE-600)1466514-1 |a 10.1016/j.jcrysgro.2016.01.015 |g Vol. 439, p. 99 - 103 |p 99 - 103 |t Journal of crystal growth |v 439 |x 0022-0248 |y 2016 |
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