000827174 001__ 827174
000827174 005__ 20240610120539.0
000827174 0247_ $$2doi$$a10.1002/9783527808465.EMC2016.6207
000827174 037__ $$aFZJ-2017-01372
000827174 041__ $$aEnglish
000827174 1001_ $$0P:(DE-HGF)0$$aMohamadi, Maryam Beig$$b0
000827174 1112_ $$a16th European Microscopy Congress (EMC 2016)$$cLyon$$d2016-08-28 - 2016-09-02$$wFrance
000827174 245__ $$aThe influence of Yb and Bi doping on the thermoelectric properties of Mg2Si0.4Sn0.6 studied using transmission electron microscopy
000827174 260__ $$aWeinheim, Germany$$bWiley-VCH Verlag GmbH & Co. KGaA$$c2016
000827174 29510 $$aEuropean Microscopy Congress 2016: Proceedings / Mohamadi, Maryam Beig  ;ISBN: 9783527808465
000827174 300__ $$a1046 - 1047
000827174 3367_ $$2ORCID$$aCONFERENCE_PAPER
000827174 3367_ $$033$$2EndNote$$aConference Paper
000827174 3367_ $$2BibTeX$$aINPROCEEDINGS
000827174 3367_ $$2DRIVER$$aconferenceObject
000827174 3367_ $$2DataCite$$aOutput Types/Conference Paper
000827174 3367_ $$0PUB:(DE-HGF)8$$2PUB:(DE-HGF)$$aContribution to a conference proceedings$$bcontrib$$mcontrib$$s1485872145_18214
000827174 3367_ $$0PUB:(DE-HGF)7$$2PUB:(DE-HGF)$$aContribution to a book$$mcontb
000827174 520__ $$aCurrent research in thermoelectric materials is focused on increasing the figure of merit ZT=(S2σ/κ)T (where S is the Seebeck coefficient and σ is the electrical conductivity) by maximizing the power factor PF (S2σ) and/or minimizing the thermal conductivity (κ). Attempts to maximize the PF include the development of new materials and optimization of existing materials by doping and nano-structuring. A reduction in thermal conductivity can be achieved by alloying, by producing disordered or complex unit cells or by nanostructuring. Here, we investigate a Bi-doped and a Bi- and Yb- doped Mg2Si0.4Sn0.6 alloy. We discuss the influence of composition, crystal structure and microstructure on the thermoelectric performance of the materials, in order to assess new opportunities for enhancing the performance of bulk nano-structured composite materials.Samples were produced by powder metallurgical processes, starting from a stoichiometric mixture of a melt-spun Mg or Mg-Yb pre-alloy and Si, Sn and Bi powders. After performing high energy milling to mix the components homogeneously under a protective Ar atmosphere, the material was simultaneously compacted and synthesized during a FAST process.Pure Mg2Si0.4Sn0.6 is an n-type semiconductor with a low value of σ. S is negative between room temperature and 600 °C. σ increases approximately linearly with Bi concentration. An optimized doping content leads to a value for σ of 140000 - 180000 S/m and a value for S of - 150 µV/K at room temperature. Strong doping results in degeneracy of the semiconductor. Therefore, σ decreases with temperature, while S increases. The temperature dependence of κ shows two “branches”. In samples that have an optimized Bi doping concentration, κ decreases from room temperature to approximately 400 °C due to a dominant phonon-phonon scattering mechanism, with a minimum of 2 W/mK. At higher temperatures, thermal excitation of charge carriers across the band gap increases κ. Bi-Yb-doped Mg2Si0.4Sn0.6 shows a larger ZT than the Yb-free sample.We prepared specimens for high-resolution transmission electron microscopy (HRTEM) using an FEI Helios Nanolab 400s focused ion beam (FIB) dual-beam system. HRTEM images were acquired at 300 kV using an FEI Titan 80-300 TEM equipped with a spherical aberration (Cs) corrector on the objective lens. High-angle annular dark-field (HAADF) scanning TEM (STEM) images and elemental maps were acquired at 200 kV on an FEI Titan G2 80-200 TEM equipped with a Cs corrector on the condenser lens system.An inspection of the microstructures of the materials by TEM reveals a homogeneous Mg2Si0.4Sn0.6 matrix and a similar grain size distribution in both samples. The average grain sizes are in the range 1 - 3 μm, which shows that an improvement in the thermoelectric properties of the Bi- and Yb- doped alloy cannot be attributed to grain size. High spatial resolution energy-dispersive X-ray spectroscopy (EDXS) shows that the elemental distribution inside the grains differs from that at the grain boundaries. Our results show that Yb does not form a solid solution with Mg2Si0.4Sn0.6, but instead forms distinct grains by reacting with Bi and Sn. The formation of Bi-rich precipitates in Bi- and Yb- doped Mg2Si0.4Sn0.6 reduces the Bi content in the otherwise homogeneously doped matrix. Some oxygen enrichment in the region of the grain boundaries, associated with the formation of MgO and SiOx, was observed in both samples. Sn and Si nanoscale precipitates were detected in the Bi-doped sample.
000827174 536__ $$0G:(DE-HGF)POF3-143$$a143 - Controlling Configuration-Based Phenomena (POF3-143)$$cPOF3-143$$fPOF III$$x0
000827174 588__ $$aDataset connected to CrossRef Book
000827174 7001_ $$0P:(DE-Juel1)157886$$aTavabi, Amir Hossein$$b1
000827174 7001_ $$0P:(DE-Juel1)144121$$aDunin-Borkowski, Rafal$$b2
000827174 7001_ $$0P:(DE-HGF)0$$aPöhle, Georg$$b3
000827174 7001_ $$0P:(DE-HGF)0$$aPacheco, Vicente$$b4
000827174 773__ $$a10.1002/9783527808465.EMC2016.6207
000827174 8564_ $$uhttps://juser.fz-juelich.de/record/827174/files/emc20166207.pdf$$yRestricted
000827174 8564_ $$uhttps://juser.fz-juelich.de/record/827174/files/emc20166207.gif?subformat=icon$$xicon$$yRestricted
000827174 8564_ $$uhttps://juser.fz-juelich.de/record/827174/files/emc20166207.jpg?subformat=icon-1440$$xicon-1440$$yRestricted
000827174 8564_ $$uhttps://juser.fz-juelich.de/record/827174/files/emc20166207.jpg?subformat=icon-180$$xicon-180$$yRestricted
000827174 8564_ $$uhttps://juser.fz-juelich.de/record/827174/files/emc20166207.jpg?subformat=icon-640$$xicon-640$$yRestricted
000827174 8564_ $$uhttps://juser.fz-juelich.de/record/827174/files/emc20166207.pdf?subformat=pdfa$$xpdfa$$yRestricted
000827174 909CO $$ooai:juser.fz-juelich.de:827174$$pVDB
000827174 9141_ $$y2016
000827174 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-HGF)0$$aForschungszentrum Jülich$$b0$$kFZJ
000827174 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)157886$$aForschungszentrum Jülich$$b1$$kFZJ
000827174 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)144121$$aForschungszentrum Jülich$$b2$$kFZJ
000827174 9131_ $$0G:(DE-HGF)POF3-143$$1G:(DE-HGF)POF3-140$$2G:(DE-HGF)POF3-100$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Configuration-Based Phenomena$$x0
000827174 920__ $$lyes
000827174 9201_ $$0I:(DE-Juel1)PGI-5-20110106$$kPGI-5$$lMikrostrukturforschung$$x0
000827174 9201_ $$0I:(DE-Juel1)ER-C-1-20170209$$kER-C-1$$lPhysik Nanoskaliger Systeme$$x1
000827174 980__ $$acontrib
000827174 980__ $$aVDB
000827174 980__ $$acontb
000827174 980__ $$aI:(DE-Juel1)PGI-5-20110106
000827174 980__ $$aI:(DE-Juel1)ER-C-1-20170209
000827174 980__ $$aUNRESTRICTED
000827174 981__ $$aI:(DE-Juel1)ER-C-1-20170209