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@INPROCEEDINGS{Duchamp:827189,
      author       = {Duchamp, Martial and Vignères, Vincent and Dufourcq,
                      Gautier and Migunov, Vadim and Dunin-Borkowski, Rafal},
      title        = {{A}utomated in situ transmission electron microscopy
                      experiments},
      address      = {Weinheim, Germany},
      publisher    = {Wiley-VCH Verlag GmbH $\&$ Co. KGaA},
      reportid     = {FZJ-2017-01387},
      pages        = {638 - 639},
      year         = {2016},
      comment      = {European Microscopy Congress 2016: Proceedings},
      booktitle     = {European Microscopy Congress 2016:
                       Proceedings},
      abstract     = {In situ transmission electron microscopy (TEM) involves the
                      application of a stimulus to a specimen in the TEM while
                      changes to the specimen are recorded using imaging,
                      diffraction or spectroscopic techniques. However, in most
                      previous in situ TEM studies the apparatus that was used to
                      apply a stimulus did not communicate with the software or
                      hardware that was used to control the TEM and collect
                      data.Important criteria for in situ TEM experiments include
                      minimisation of irradiation dose and avoidance of user bias,
                      resulting in the need to work quickly - and ideally in an
                      automated way. A direct interface between a setup used to
                      apply a stimulus and an interface used to control the TEM is
                      therefore crucial. We have implemented plug-ins for Digital
                      Microcrograph (DM), which can be used to communicate
                      directly with a GPIB bus compatible setup (Fig. 1 a) and
                      external Labview-based software that can then be used to
                      control the stimulus applied to the specimen (e.g.,
                      temperature regulation). Values of the applied stimulus and
                      signals measured from the specimen are recorded and added to
                      the tags and titles of TEM images.We have studied silicon
                      oxide-based resistive switching devices in situ in the TEM
                      using a movable W needle and recorded bright-field (BF) TEM
                      images with different voltages applied to the specimen (Figs
                      1 b-d). A DM script was used to apply a voltage ramp and to
                      measure the current flowing through the sample in an
                      automated way for each applied voltage. By using this
                      approach, we were able to follow the formation and
                      destruction of a conductive path across the SiOx layer and
                      to correlate it with a measured change in conductivity.A
                      second experiment involved in situ electrical biasing of a
                      solar cell and recording a map of electron beam induced
                      current (EBIC) inside the TEM. DM plug-ins were used to
                      record the current generated by the electron beam while
                      scanning the active layer of a μc-Si:H solar cell (Fig. 2
                      a). The same script was used to measure the current across
                      the sample as the electron beam was scanned across the
                      specimen and a voltage applied to the solar cell.
                      Simultaneously acquired scanning TEM and EBIC maps are shown
                      in Figs 2 (c-d).A further in situ TEM experiment performed
                      on a biased solar cell involved the acquisition of off-axis
                      electron holograms to determine changes in electrostatic
                      potential across the active layer. An external stimulus such
                      as an applied bias can be applied to such as specimen to
                      remove the unwanted mean inner potential contribution from
                      the results. For each applied voltage, a hologram was
                      acquired from the area of interest on the specimen, the
                      stage was moved to record a vacuum reference hologram and it
                      was then returned to the same sample area. This approach was
                      used to record a series of amplitude and phase images from
                      electron holograms of an electrically biased Si:H solar cell
                      (Fig. 2 e) and to extract phase profiles across the top ZnO
                      contact, the p-doped Si layer and the amorphous intrinsic
                      layer (top right of Fig. 2 e).We are grateful to Michael
                      Farle and AG Farle at the University of Duisburg-Essen for
                      technical help. We also acknowledge the European Union under
                      the Seventh Framework Programme under a contract for an
                      Integrated Infrastructure Initiative (Reference 312483
                      ESTEEM2) and the European Research Council for an Advanced
                      Grant (Reference 320832 IMAGINE).},
      month         = {Aug},
      date          = {2016-08-28},
      organization  = {16th European Microscopy Congress,
                       Lyon (France), 28 Aug 2016 - 2 Sep
                       2016},
      cin          = {PGI-5 / ER-C-1},
      cid          = {I:(DE-Juel1)PGI-5-20110106 / I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      doi          = {10.1002/9783527808465.EMC2016.6434},
      url          = {https://juser.fz-juelich.de/record/827189},
}