000827205 001__ 827205 000827205 005__ 20240610120546.0 000827205 0247_ $$2doi$$a10.1063/1.4942954 000827205 0247_ $$2Handle$$a2128/13703 000827205 0247_ $$2WOS$$aWOS:000377962500267 000827205 0247_ $$2altmetric$$aaltmetric:10843854 000827205 037__ $$aFZJ-2017-01403 000827205 041__ $$aEnglish 000827205 082__ $$a530 000827205 1001_ $$0P:(DE-Juel1)144926$$aKovács, A.$$b0$$eCorresponding author 000827205 1112_ $$a2016 Joint MMM-Intermag Conference$$cSan Diego$$d2016-01-11 - 2016-01-15$$wCA 000827205 245__ $$aMagnetic microstructure in a stress-annealed Fe $_{73.5}$ Si $_{15.5}$ B $_{7}$ Nb $_{3}$ Cu $_{1}$ soft magnetic alloy observed using off-axis electron holography and Lorentz microscopy 000827205 260__ $$aNew York, NY$$bAmerican Inst. of Physics$$c2016 000827205 300__ $$a056501 000827205 3367_ $$2ORCID$$aCONFERENCE_PAPER 000827205 3367_ $$033$$2EndNote$$aConference Paper 000827205 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$mjournal 000827205 3367_ $$2BibTeX$$aINPROCEEDINGS 000827205 3367_ $$2DRIVER$$aconferenceObject 000827205 3367_ $$2DataCite$$aOutput Types/Conference Paper 000827205 3367_ $$0PUB:(DE-HGF)8$$2PUB:(DE-HGF)$$aContribution to a conference proceedings$$bcontrib$$mcontrib$$s1485878336_18215 000827205 520__ $$aFe-Si-B-Nb-Cu alloys are attractive for high frequency applications due to their low coercivity and high saturation magnetization. Here, we study the effect of stress annealing on magnetic microstructure in Fe73.5Si15.5B7Nb3Cu1 using off-axis electron holography and the Fresnel mode of Lorentz transmission electron microscopy. A stress of 50 MPa was applied to selected samples during rapid annealing for 4 s, resulting in uniaxial anisotropy perpendicular to the stress direction. The examination of focused ion beam milled lamellae prepared from each sample revealed a random magnetic domain pattern in the sample that had been rapidly annealed in the absence of stress, whereas a highly regular domain pattern was observed in the stress-annealed sample. We also measured a decrease in domain wall width from ∼ 94 nm in the sample annealed without stress to ∼ 80 nm in the stress-annealed sample. 000827205 536__ $$0G:(DE-HGF)POF3-143$$a143 - Controlling Configuration-Based Phenomena (POF3-143)$$cPOF3-143$$fPOF III$$x0 000827205 588__ $$aDataset connected to CrossRef 000827205 7001_ $$0P:(DE-HGF)0$$aPradeep, K. 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