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@ARTICLE{Brose:827210,
      author       = {Brose, Sascha and Tempeler, Jenny and Danylyuk, Serhiy and
                      Loosen, Peter and Juschkin, Larissa},
      title        = {{A}chromatic {T}albot lithography with partially coherent
                      extreme ultraviolet radiation: process window analysis},
      journal      = {Journal of micro/nanolithography, MEMS and MOEMS},
      volume       = {15},
      number       = {4},
      issn         = {1932-5150},
      address      = {Bellingham, Wash.},
      publisher    = {SPIE90039},
      reportid     = {FZJ-2017-01408},
      pages        = {043502 -},
      year         = {2016},
      abstract     = {The main purpose of this work is the experimental
                      determination of the process window for achromatic Talbot
                      lithography with partially coherent extreme ultraviolet
                      (EUV) radiation. This work has been performed using the EUV
                      laboratory exposure tool. It consists of a discharge
                      produced plasma source with a direct beam path to a
                      phase-shifting transmission mask, avoiding losses due to
                      additional optical components, the photoresist-coated wafer,
                      and a positioning system for each component. Both the source
                      and the mask are optimized for 11-nm wavelength. The process
                      window has been identified by a systematic analysis of
                      several exposure series. The optimization of exposure
                      parameters resulted in 50-nm half-pitch of the wafer
                      features using a transmission mask with a rectangular dot
                      array of 70-nm half-pitch. The depth of field is found to be
                      20  μm, and it can be extended by spatial filtering.
                      The exposure dose and mask–wafer distance are varied
                      around their optimal values to estimate the process window,
                      using defectivity of the pattern as a control parameter.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000397068400004},
      doi          = {10.1117/1.JMM.15.4.043502},
      url          = {https://juser.fz-juelich.de/record/827210},
}