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@ARTICLE{Goux:827316,
author = {Goux, Ludovic and Valov, Ilia},
title = {{E}lectrochemical processes and device improvement in
conductive bridge {RAM} cells},
journal = {Physica status solidi / A},
volume = {213},
number = {2},
issn = {1862-6300},
address = {Weinheim},
publisher = {Wiley-VCH},
reportid = {FZJ-2017-01487},
pages = {274 - 288},
year = {2016},
abstract = {In this paper, we discuss the recent progress on the
fundamental understandings of ECM/CBRAM cells but also on
the improved device structures and reliability for
high-density applications. The influences of the local
chemical environment and the material selection/combination
are highlighted, and the filament dynamics is described in a
general framework that relates all the reported switching
modes. Furthermore we also detail some correlation evidences
between the filament shape and device electrical
characteristics. Finally, we discuss technological
challenges related to current-scaling and cell size-scaling.
Large switching variability associated to low current needs
to be mitigated by appropriate Write-verify methods, while
cell scaling requires novel processing techniques such as Cu
dry-etch.},
cin = {PGI-7},
ddc = {530},
cid = {I:(DE-Juel1)PGI-7-20110106},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000370188700008},
doi = {10.1002/pssa.201532813},
url = {https://juser.fz-juelich.de/record/827316},
}