000827318 001__ 827318
000827318 005__ 20210129225819.0
000827318 0247_ $$2doi$$a10.1016/j.ssi.2016.08.015
000827318 0247_ $$2ISSN$$a0167-2738
000827318 0247_ $$2ISSN$$a1872-7689
000827318 0247_ $$2WOS$$aWOS:000386743400008
000827318 0247_ $$2altmetric$$aaltmetric:21832646
000827318 037__ $$aFZJ-2017-01489
000827318 082__ $$a530
000827318 1001_ $$0P:(DE-HGF)0$$aBerendts, S.$$b0$$eCorresponding author
000827318 245__ $$aIonic conductivity of low yttria-doped cubic zirconium oxide nitride single crystals
000827318 260__ $$aAmsterdam [u.a.]$$bElsevier Science$$c2016
000827318 3367_ $$2DRIVER$$aarticle
000827318 3367_ $$2DataCite$$aOutput Types/Journal article
000827318 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1486037968_4323
000827318 3367_ $$2BibTeX$$aARTICLE
000827318 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000827318 3367_ $$00$$2EndNote$$aJournal Article
000827318 520__ $$aLow yttria-doped cubic zirconium oxide nitride single crystals with high nitrogen contents show unexpected high oxygen ion conductivity in a temperature range between 100 °C and 300 °C. The observed values are about two orders of magnitude higher than the conductivities for conventionally used 9.5 YSZ. This can be related to an optimal anion vacancy concentration within the oxide nitride material and the low activation energy of the vacancy-based conductivity process.
000827318 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000827318 588__ $$aDataset connected to CrossRef
000827318 7001_ $$0P:(DE-HGF)0$$aEufinger, J.-P.$$b1
000827318 7001_ $$0P:(DE-Juel1)131014$$aValov, I.$$b2
000827318 7001_ $$0P:(DE-HGF)0$$aJanek, J.$$b3
000827318 7001_ $$0P:(DE-HGF)0$$aLerch, M.$$b4
000827318 773__ $$0PERI:(DE-600)1500750-9$$a10.1016/j.ssi.2016.08.015$$gVol. 296, p. 42 - 46$$p42 - 46$$tSolid state ionics$$v296$$x0167-2738$$y2016
000827318 8564_ $$uhttps://juser.fz-juelich.de/record/827318/files/1-s2.0-S0167273816302818-main.pdf$$yRestricted
000827318 8564_ $$uhttps://juser.fz-juelich.de/record/827318/files/1-s2.0-S0167273816302818-main.gif?subformat=icon$$xicon$$yRestricted
000827318 8564_ $$uhttps://juser.fz-juelich.de/record/827318/files/1-s2.0-S0167273816302818-main.jpg?subformat=icon-1440$$xicon-1440$$yRestricted
000827318 8564_ $$uhttps://juser.fz-juelich.de/record/827318/files/1-s2.0-S0167273816302818-main.jpg?subformat=icon-180$$xicon-180$$yRestricted
000827318 8564_ $$uhttps://juser.fz-juelich.de/record/827318/files/1-s2.0-S0167273816302818-main.jpg?subformat=icon-640$$xicon-640$$yRestricted
000827318 8564_ $$uhttps://juser.fz-juelich.de/record/827318/files/1-s2.0-S0167273816302818-main.pdf?subformat=pdfa$$xpdfa$$yRestricted
000827318 909CO $$ooai:juser.fz-juelich.de:827318$$pVDB
000827318 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)131014$$aForschungszentrum Jülich$$b2$$kFZJ
000827318 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000827318 9141_ $$y2016
000827318 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000827318 915__ $$0StatID:(DE-HGF)0550$$2StatID$$aNo Authors Fulltext
000827318 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search
000827318 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bSOLID STATE IONICS : 2015
000827318 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000827318 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000827318 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000827318 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000827318 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC
000827318 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000827318 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000827318 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000827318 9201_ $$0I:(DE-Juel1)PGI-7-20110106$$kPGI-7$$lElektronische Materialien$$x0
000827318 980__ $$ajournal
000827318 980__ $$aVDB
000827318 980__ $$aUNRESTRICTED
000827318 980__ $$aI:(DE-Juel1)PGI-7-20110106