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@ARTICLE{Berendts:827318,
      author       = {Berendts, S. and Eufinger, J.-P. and Valov, I. and Janek,
                      J. and Lerch, M.},
      title        = {{I}onic conductivity of low yttria-doped cubic zirconium
                      oxide nitride single crystals},
      journal      = {Solid state ionics},
      volume       = {296},
      issn         = {0167-2738},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier Science},
      reportid     = {FZJ-2017-01489},
      pages        = {42 - 46},
      year         = {2016},
      abstract     = {Low yttria-doped cubic zirconium oxide nitride single
                      crystals with high nitrogen contents show unexpected high
                      oxygen ion conductivity in a temperature range between 100
                      °C and 300 °C. The observed values are about two orders of
                      magnitude higher than the conductivities for conventionally
                      used 9.5 YSZ. This can be related to an optimal anion
                      vacancy concentration within the oxide nitride material and
                      the low activation energy of the vacancy-based conductivity
                      process.},
      cin          = {PGI-7},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000386743400008},
      doi          = {10.1016/j.ssi.2016.08.015},
      url          = {https://juser.fz-juelich.de/record/827318},
}