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@ARTICLE{vondenDriesch:827490,
      author       = {von den Driesch, Nils and Stange, Daniela and Wirths,
                      Stephan and Rainko, Denis and Povstugar, Ivan and Savenko,
                      Aleksei and Breuer, Uwe and Geiger, Richard and Sigg, Hans
                      and Ikonic, Zoran and Hartmann, Jean-Michel and
                      Grützmacher, Detlev and Mantl, Siegfried and Buca, Dan
                      Mihai},
      title        = {{S}i{G}e{S}n {T}ernaries for {E}fficient {G}roup {IV}
                      {H}eterostructure {L}ight {E}mitters},
      journal      = {Small},
      volume       = {13},
      number       = {16},
      issn         = {1613-6810},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2017-01615},
      pages        = {1603321},
      year         = {2017},
      abstract     = {SiGeSn ternaries are grown on Ge-buffered Si wafers
                      incorporating Si or Sn contents of up to 15 $at\%.$ The
                      ternaries exhibit layer thicknesses up to 600 nm, while
                      maintaining a high crystalline quality. Tuning of
                      stoichiometry and strain, as shown by means of absorption
                      measurements, allows bandgap engineering in the short-wave
                      infrared range of up to about 2.6 µm. Temperature-dependent
                      photoluminescence experiments indicate ternaries near the
                      indirect-to-direct bandgap transition, proving their
                      potential for ternary-based light emitters in the
                      aforementioned optical range. The ternaries' layer
                      relaxation is also monitored to explore their use as
                      strain-relaxed buffers, since they are of interest not only
                      for light emitting diodes investigated in this paper but
                      also for many other optoelectronic and electronic
                      applications. In particular, the authors have epitaxially
                      grown a GeSn/SiGeSn multiquantum well heterostructure, which
                      employs SiGeSn as barrier material to efficiently confine
                      carriers in GeSn wells. Strong room temperature light
                      emission from fabricated light emitting diodes proves the
                      high potential of this heterostructure approach.},
      cin          = {PGI-9 / JARA-FIT / ZEA-3},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)ZEA-3-20090406},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000399455900004},
      pubmed       = {pmid:28160408},
      doi          = {10.1002/smll.201603321},
      url          = {https://juser.fz-juelich.de/record/827490},
}