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@INPROCEEDINGS{Liu:827608,
      author       = {Liu, Yong and Kim, Do Yun and Pomaska, Manuel and Augarten,
                      Yael and Lambertz, Andreas and Lentz, Florian and Mock, Jan
                      and Ding, Kaining},
      title        = {{P}ost-deposition {C}atalytic-doping of {M}icrocrystalline
                      {S}ilicon {T}hin-layer for the {A}pplication in {S}ilicon
                      {H}eterojunction {S}olar {C}ell},
      reportid     = {FZJ-2017-01727},
      year         = {2016},
      abstract     = {Silicon heterojunction (SHJ) solar cell is one of the most
                      promising candidates for the next-generation high-efficiency
                      $(>25\%)$ mainstream photovoltaic technology. It consists of
                      a crystalline silicon wafer coated with a stack of
                      functional thin-films on both sides. Conventionally,
                      intrinsic and doped amorphous silicon (a-Si:H) is used as
                      the passivation layer and emitter or back surface field
                      (BSF), respectively. Doped microcrystalline silicon
                      (µc-Si:H) is considered a more advantageous alternative to
                      the amorphous emitter and BSF layers due to higher
                      electrical conductivity giving rise to lower series and
                      contact resistance. In this contribution, we use the so
                      called “Cat-doping” process, in which the doping is
                      achieved by the radicals decomposed at the hot catalyzer
                      surface, to actively dope µc-Si:H thin-layers, in order to
                      reach conductivity values higher than those achievable in
                      as-grown doped µc-Si:H for the application in SHJ solar
                      cells. We show that the conductivity of the µc-Si:H films
                      notably increased after the Cat-doping, which confirms that
                      it is possible to dope µc-Si:H using Cat-doping. We
                      systematically investigated the impact of (i) the Cat-doping
                      process parameters e.g. wire temperature and gas composition
                      as well as (ii) the µc-Si:H microstructure e.g. the
                      crystalline volume fraction on the effectiveness of the
                      Cat-doping process in terms of conductivity increase. In
                      addition, the (positive and negative) effects of the
                      Cat-doping on the passivation quality of the underlying
                      intrinsic a-Si:H layer will be analyzed.},
      month         = {Sep},
      date          = {2016-09-06},
      organization  = {9th international conference on Hot
                       Wire (Cat) and Initiated Chemical Vapor
                       Deposition, Philadelphia (USA), 6 Sep
                       2016 - 9 Sep 2016},
      subtyp        = {Other},
      cin          = {IEK-5},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121) / HITEC
                      - Helmholtz Interdisciplinary Doctoral Training in Energy
                      and Climate Research (HITEC) (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF3-121 / G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/827608},
}