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@INPROCEEDINGS{Casu:827684,
      author       = {Casu, E. A. and Vitale, W. A. and Oliva, N. and Rosca, T.
                      and Biswas, A. and Alper, C. and Krammer, A. and Luong, G.
                      V. and Zhao, Q. T. and Mantl, S. and Schuler, A. and
                      Seabaugh, A. and Ionescu, A. M.},
      title        = {{H}ybrid phase-change — {T}unnel {FET} ({PC}-{TFET})
                      switch with subthreshold swing $\<$ 10m{V}/decade and
                      sub-0.1 body factor: {D}igital and analog benchmarking},
      publisher    = {IEEE},
      reportid     = {FZJ-2017-01797},
      pages        = {508-511},
      year         = {2016},
      note         = {ISBN 978-1-5090-3902-9},
      abstract     = {In this paper we report the first hybrid Phase-Change —
                      Tunnel FET (PC-TFET) device configurations for achieving a
                      deep sub-thermionic steep subthreshold swing at room
                      temperature and subthreshold power savings. The proposed
                      hybrid device feedbacks the steep transition of
                      Metal-Insulator transition in a VO2 structure into Gate or
                      Source configurations of strained silicon nanowire Tunnel
                      FETs, to achieve a switching with lon/Ioff better that
                      5.5×106 and with a subthreshold swing of 4.0 mV/dec at 25
                      °C. We demonstrate that the principle of PC-TFET switching
                      relates to an internal amplification resulting in a
                      sub-unity body factor, m, which is reduced to values below
                      0.1 for a current range larger than 2–3 decades. We report
                      a full experimental digital and analog benchmarking of the
                      new device and compare it with Tunnel FETs and CMOS.
                      Remarkably, the PC-TFET can achieve analog figures of merit
                      like gm/Id breaking the 40 V−1 limit of MOSFETs. We
                      demonstrate and report the first buffered oscillator cell
                      for neuromorphic computing exploiting the gate configuration
                      of PC-TFET.},
      month         = {Dec},
      date          = {2016-12-03},
      organization  = {2016 IEEE International Electron
                       Devices Meeting (IEDM), San Francisco
                       (CA), 3 Dec 2016 - 7 Dec 2016},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)8},
      doi          = {10.1109/IEDM.2016.7838452},
      url          = {https://juser.fz-juelich.de/record/827684},
}