000827877 001__ 827877
000827877 005__ 20250701125849.0
000827877 0247_ $$2doi$$a10.1103/PhysRevB.95.075310
000827877 0247_ $$2ISSN$$a0163-1829
000827877 0247_ $$2ISSN$$a0556-2805
000827877 0247_ $$2ISSN$$a1094-1622
000827877 0247_ $$2ISSN$$a1095-3795
000827877 0247_ $$2ISSN$$a1098-0121
000827877 0247_ $$2ISSN$$a1550-235X
000827877 0247_ $$2ISSN$$a2469-9950
000827877 0247_ $$2ISSN$$a2469-9969
000827877 0247_ $$2Handle$$a2128/13896
000827877 0247_ $$2WOS$$aWOS:000395989400010
000827877 0247_ $$2altmetric$$aaltmetric:21832838
000827877 037__ $$aFZJ-2017-01960
000827877 041__ $$aEnglish
000827877 082__ $$a530
000827877 1001_ $$0P:(DE-Juel1)162164$$aJust, Sven$$b0
000827877 245__ $$aSurface conductivity of Si(100) and Ge(100) surfaces determined from four-point transport measurements using an analytical N -layer conductance model
000827877 260__ $$aWoodbury, NY$$bAmerican Physical Society$$c2017
000827877 3367_ $$2DRIVER$$aarticle
000827877 3367_ $$2DataCite$$aOutput Types/Journal article
000827877 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1488288665_6800
000827877 3367_ $$2BibTeX$$aARTICLE
000827877 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000827877 3367_ $$00$$2EndNote$$aJournal Article
000827877 520__ $$aAn analytical N-layer model for charge transport close to a surface is derived from the solution of Poisson's equation and used to describe distance-dependent electrical four-point measurements on the microscale. As the N-layer model comprises a surface channel, multiple intermediate layers, and a semi-infinite bulk, it can be applied to semiconductors in combination with a calculation of the near-surface band bending to model very precisely the measured four-point resistance on the surface of a specific sample and to extract a value for the surface conductivity. For describing four-point measurements on sample geometries with mixed 2D-3D conduction channels, often a very simple parallel-circuit model has so far been used in the literature, but the application of this model is limited, as there are already significant deviations, when it is compared to the lowest possible case of the N-layer model, i.e., the three-layer model. Furthermore, the N-layer model is applied to published distance-dependent four-point resistance measurements obtained with a multitip scanning tunneling microscope (STM) on germanium(100) and silicon(100) with different bulk doping concentrations resulting in the determination of values for the surface conductivities of these materials.
000827877 536__ $$0G:(DE-HGF)POF3-141$$a141 - Controlling Electron Charge-Based Phenomena (POF3-141)$$cPOF3-141$$fPOF III$$x0
000827877 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x1
000827877 542__ $$2Crossref$$i2017-02-27$$uhttp://link.aps.org/licenses/aps-default-license
000827877 588__ $$aDataset connected to CrossRef
000827877 7001_ $$0P:(DE-Juel1)133754$$aSoltner, Helmut$$b1
000827877 7001_ $$0P:(DE-Juel1)138943$$aKorte, Stefan$$b2
000827877 7001_ $$0P:(DE-Juel1)128762$$aCherepanov, Vasily$$b3
000827877 7001_ $$0P:(DE-Juel1)128794$$aVoigtländer, Bert$$b4$$eCorresponding author
000827877 77318 $$2Crossref$$3journal-article$$a10.1103/physrevb.95.075310$$bAmerican Physical Society (APS)$$d2017-02-27$$n7$$p075310$$tPhysical Review B$$v95$$x2469-9950$$y2017
000827877 773__ $$0PERI:(DE-600)2844160-6$$a10.1103/PhysRevB.95.075310$$gVol. 95, no. 7, p. 075310$$n7$$p075310$$tPhysical review / B$$v95$$x2469-9950$$y2017
000827877 8564_ $$uhttps://juser.fz-juelich.de/record/827877/files/PhysRevB.95.075310-1.pdf$$yOpenAccess
000827877 8564_ $$uhttps://juser.fz-juelich.de/record/827877/files/PhysRevB.95.075310-1.gif?subformat=icon$$xicon$$yOpenAccess
000827877 8564_ $$uhttps://juser.fz-juelich.de/record/827877/files/PhysRevB.95.075310-1.jpg?subformat=icon-1440$$xicon-1440$$yOpenAccess
000827877 8564_ $$uhttps://juser.fz-juelich.de/record/827877/files/PhysRevB.95.075310-1.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000827877 8564_ $$uhttps://juser.fz-juelich.de/record/827877/files/PhysRevB.95.075310-1.jpg?subformat=icon-640$$xicon-640$$yOpenAccess
000827877 8564_ $$uhttps://juser.fz-juelich.de/record/827877/files/PhysRevB.95.075310-1.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000827877 909CO $$ooai:juser.fz-juelich.de:827877$$pdnbdelivery$$pVDB$$popen_access$$pdriver$$popenaire
000827877 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)162164$$aForschungszentrum Jülich$$b0$$kFZJ
000827877 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)133754$$aForschungszentrum Jülich$$b1$$kFZJ
000827877 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128762$$aForschungszentrum Jülich$$b3$$kFZJ
000827877 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128794$$aForschungszentrum Jülich$$b4$$kFZJ
000827877 9131_ $$0G:(DE-HGF)POF3-141$$1G:(DE-HGF)POF3-140$$2G:(DE-HGF)POF3-100$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000827877 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x1
000827877 9141_ $$y2017
000827877 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000827877 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search
000827877 915__ $$0LIC:(DE-HGF)APS-112012$$2HGFVOC$$aAmerican Physical Society Transfer of Copyright Agreement
000827877 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bPHYS REV B : 2015
000827877 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000827877 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000827877 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000827877 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000827877 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000827877 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC
000827877 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000827877 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000827877 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000827877 920__ $$lyes
000827877 9201_ $$0I:(DE-Juel1)PGI-3-20110106$$kPGI-3$$lFunktionale Nanostrukturen an Oberflächen$$x0
000827877 9201_ $$0I:(DE-Juel1)ZEA-1-20090406$$kZEA-1$$lZentralinstitut für Technologie$$x1
000827877 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x2
000827877 9801_ $$aFullTexts
000827877 980__ $$ajournal
000827877 980__ $$aVDB
000827877 980__ $$aUNRESTRICTED
000827877 980__ $$aI:(DE-Juel1)PGI-3-20110106
000827877 980__ $$aI:(DE-Juel1)ZEA-1-20090406
000827877 980__ $$aI:(DE-82)080009_20140620
000827877 981__ $$aI:(DE-Juel1)ITE-20250108
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevLett.68.1192
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1016/0039-6028(96)00052-0
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1016/S0039-6028(96)01470-7
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevB.79.035318
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevLett.112.246802
000827877 999C5 $$1D. K. Schroder$$2Crossref$$oD. K. Schroder Semiconductor Material and Device Characterization 2006$$tSemiconductor Material and Device Characterization$$y2006
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1063/1.4793376
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1063/1.2969769
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1063/1.4773485
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1021/acs.nanolett.5b04425
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevB.92.035309
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1016/j.susc.2008.02.041
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevLett.115.066801
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1149/1.2411781
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1016/0038-1101(69)90092-6
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1016/0038-1101(65)90047-X
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1016/0038-1101(77)90193-9
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1149/1.2129311
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1149/1.1393940
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1149/1.1890766
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevLett.97.206803
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevB.68.113303
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevB.65.115424
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1063/1.4891858
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1063/1.3068497
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1063/1.2410241
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevB.78.075203
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevB.33.8855
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevLett.45.1112
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1063/1.4936079
000827877 999C5 $$1J. D. Jackson$$2Crossref$$oJ. D. Jackson Classical Electrodynamics 1999$$tClassical Electrodynamics$$y1999
000827877 999C5 $$2Crossref$$9-- missing cx lookup --$$a10.1016/0038-1101(78)90291-5
000827877 999C5 $$1H. Lüth$$2Crossref$$9-- missing cx lookup --$$a10.1007/978-3-319-10756-1$$y2015