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@ARTICLE{Just:827877,
      author       = {Just, Sven and Soltner, Helmut and Korte, Stefan and
                      Cherepanov, Vasily and Voigtländer, Bert},
      title        = {{S}urface conductivity of {S}i(100) and {G}e(100) surfaces
                      determined from four-point transport measurements using an
                      analytical {N} -layer conductance model},
      journal      = {Physical review / B},
      volume       = {95},
      number       = {7},
      issn         = {2469-9950},
      address      = {Woodbury, NY},
      publisher    = {American Physical Society},
      reportid     = {FZJ-2017-01960},
      pages        = {075310},
      year         = {2017},
      abstract     = {An analytical N-layer model for charge transport close to a
                      surface is derived from the solution of Poisson's equation
                      and used to describe distance-dependent electrical
                      four-point measurements on the microscale. As the N-layer
                      model comprises a surface channel, multiple intermediate
                      layers, and a semi-infinite bulk, it can be applied to
                      semiconductors in combination with a calculation of the
                      near-surface band bending to model very precisely the
                      measured four-point resistance on the surface of a specific
                      sample and to extract a value for the surface conductivity.
                      For describing four-point measurements on sample geometries
                      with mixed 2D-3D conduction channels, often a very simple
                      parallel-circuit model has so far been used in the
                      literature, but the application of this model is limited, as
                      there are already significant deviations, when it is
                      compared to the lowest possible case of the N-layer model,
                      i.e., the three-layer model. Furthermore, the N-layer model
                      is applied to published distance-dependent four-point
                      resistance measurements obtained with a multitip scanning
                      tunneling microscope (STM) on germanium(100) and
                      silicon(100) with different bulk doping concentrations
                      resulting in the determination of values for the surface
                      conductivities of these materials.},
      cin          = {PGI-3 / ZEA-1 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-3-20110106 / I:(DE-Juel1)ZEA-1-20090406 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {141 - Controlling Electron Charge-Based Phenomena
                      (POF3-141) / 521 - Controlling Electron Charge-Based
                      Phenomena (POF3-521)},
      pid          = {G:(DE-HGF)POF3-141 / G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000395989400010},
      doi          = {10.1103/PhysRevB.95.075310},
      url          = {https://juser.fz-juelich.de/record/827877},
}