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@INPROCEEDINGS{Czaja:828065,
author = {Czaja, Philippe and Celino, Massimo and Giusepponi, Simone
and Gusso, Michele and Aeberhard, Urs},
title = {{A}b {I}nitio {D}escription of {O}ptoelectronic
{P}roperties at {D}efective {I}nterfaces in {S}olar {C}ells},
volume = {10164},
address = {Cham},
publisher = {Springer International Publishing},
reportid = {FZJ-2017-02070},
isbn = {978-3-319-53861-7 (print)},
series = {Lecture Notes in Computer Science},
pages = {111 - 124},
year = {2017},
comment = {High-Performance Scientific Computing / Di Napoli, Edoardo
(Editor) ; Cham : Springer International Publishing, 2017,
Chapter 10 ; ISSN: 0302-9743=1611-3349 ; ISBN:
978-3-319-53861-7=978-3-319-53862-4 ;
doi:10.1007/978-3-319-53862-4},
booktitle = {High-Performance Scientific Computing
/ Di Napoli, Edoardo (Editor) ; Cham :
Springer International Publishing,
2017, Chapter 10 ; ISSN:
0302-9743=1611-3349 ; ISBN:
978-3-319-53861-7=978-3-319-53862-4 ;
doi:10.1007/978-3-319-53862-4},
abstract = {In order to optimize the optoelectronic properties of novel
solar cell architectures, such as the amorphous-crystalline
interface in silicon heterojunction devices, we calculate
and analyze the local microscopic structure at this
interface and in bulk a-Si:H, in particular with respect to
the impact of material inhomogeneities. The microscopic
information is used to extract macroscopic material
properties, and to identify localized defect states, which
govern the recombination properties encoded in quantities
such as capture cross sections used in the
Shockley-Read-Hall theory. To this end, atomic
configurations for a-Si:H and a-Si:H/c-Si interfaces are
generated using molecular dynamics. Density functional
theory calculations are then applied to these configurations
in order to obtain the electronic wave functions. These are
analyzed and characterized with respect to their
localization and their contribution to the (local) density
of states. GW calculations are performed for the a-Si:H
configuration in order to obtain a quasi-particle corrected
absorption spectrum. The results suggest that the
quasi-particle corrections can be approximated through a
scissors shift of the Kohn-Sham energies.},
month = {Oct},
date = {2016-10-04},
organization = {JHPCS16, Aachen (Germany), 4 Oct 2016
- 5 Oct 2016},
cin = {IEK-5 / JARA-HPC},
ddc = {004},
cid = {I:(DE-Juel1)IEK-5-20101013 / $I:(DE-82)080012_20140620$},
pnm = {121 - Solar cells of the next generation (POF3-121) /
Ab-initio description of transport and recombination at
defective interfaces in solar cells $(jiek50_20141101)$ /
HITEC - Helmholtz Interdisciplinary Doctoral Training in
Energy and Climate Research (HITEC) (HITEC-20170406)},
pid = {G:(DE-HGF)POF3-121 / $G:(DE-Juel1)jiek50_20141101$ /
G:(DE-Juel1)HITEC-20170406},
typ = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
doi = {10.1007/978-3-319-53862-4_10},
url = {https://juser.fz-juelich.de/record/828065},
}