%0 Journal Article
%A Mikulics, Martin
%A Kordoš, P.
%A Fox, A.
%A Kočan, M.
%A Lüth, H.
%A Sofer, Z.
%A Hardtdegen, H.
%T Efficient heat dissipation in AlGaN/GaN heterostructure grown on silver substrate
%J Applied materials today
%V 7
%@ 2352-9407
%C Amsterdam [u.a.]
%I Elsevier
%M FZJ-2017-02120
%P 134 - 137
%D 2017
%X In this paper, we present the investigation of AlGaN/GaN heterostructures deposited on metallic/silversubstrates by a novel “combined” two-step epitaxial procedure based on metalorganic vapor phase epi-taxy (MOVPE) and molecular beam epitaxy (MBE). The channel temperature was determined by highlateral and spectral resolution Raman spectroscopy. The characteristics of the structures were comparedto those of conventional AlGaN/GaN layers deposited on sapphire. An improved heat dissipation in themetal substrate based HFETs leads to a significant decrease in channel temperature (−60% at 7 W/mm)and affects the long-term stability of the drain current (±2%) favorably in the whole range under inves-tigation (up to ∼1000 h). Metallic substrates are a viable solution toward highly reliable high-powerdevices and are beneficial to low power electronics as well, where the high integration density also callsfor efficient heat dissipation.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000405594100013
%R 10.1016/j.apmt.2017.02.008
%U https://juser.fz-juelich.de/record/828150