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000828150 1001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b0$$ufzj
000828150 245__ $$aEfficient heat dissipation in AlGaN/GaN heterostructure grown on silver substrate
000828150 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2017
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000828150 520__ $$aIn this paper, we present the investigation of AlGaN/GaN heterostructures deposited on metallic/silversubstrates by a novel “combined” two-step epitaxial procedure based on metalorganic vapor phase epi-taxy (MOVPE) and molecular beam epitaxy (MBE). The channel temperature was determined by highlateral and spectral resolution Raman spectroscopy. The characteristics of the structures were comparedto those of conventional AlGaN/GaN layers deposited on sapphire. An improved heat dissipation in themetal substrate based HFETs leads to a significant decrease in channel temperature (−60% at 7 W/mm)and affects the long-term stability of the drain current (±2%) favorably in the whole range under inves-tigation (up to ∼1000 h). Metallic substrates are a viable solution toward highly reliable high-powerdevices and are beneficial to low power electronics as well, where the high integration density also callsfor efficient heat dissipation.
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000828150 7001_ $$0P:(DE-HGF)0$$aKordoš, P.$$b1
000828150 7001_ $$0P:(DE-Juel1)125583$$aFox, A.$$b2$$ufzj
000828150 7001_ $$0P:(DE-HGF)0$$aKočan, M.$$b3
000828150 7001_ $$0P:(DE-Juel1)128608$$aLüth, H.$$b4$$ufzj
000828150 7001_ $$0P:(DE-HGF)0$$aSofer, Z.$$b5$$eCorresponding author
000828150 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, H.$$b6$$ufzj
000828150 773__ $$0PERI:(DE-600)2833442-5$$a10.1016/j.apmt.2017.02.008$$gVol. 7, p. 134 - 137$$p134 - 137$$tApplied materials today$$v7$$x2352-9407$$y2017
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