TY  - JOUR
AU  - Mikulics, Martin
AU  - Kordoš, P.
AU  - Fox, A.
AU  - Kočan, M.
AU  - Lüth, H.
AU  - Sofer, Z.
AU  - Hardtdegen, H.
TI  - Efficient heat dissipation in AlGaN/GaN heterostructure grown on silver substrate
JO  - Applied materials today
VL  - 7
SN  - 2352-9407
CY  - Amsterdam [u.a.]
PB  - Elsevier
M1  - FZJ-2017-02120
SP  - 134 - 137
PY  - 2017
AB  - In this paper, we present the investigation of AlGaN/GaN heterostructures deposited on metallic/silversubstrates by a novel “combined” two-step epitaxial procedure based on metalorganic vapor phase epi-taxy (MOVPE) and molecular beam epitaxy (MBE). The channel temperature was determined by highlateral and spectral resolution Raman spectroscopy. The characteristics of the structures were comparedto those of conventional AlGaN/GaN layers deposited on sapphire. An improved heat dissipation in themetal substrate based HFETs leads to a significant decrease in channel temperature (−60% at 7 W/mm)and affects the long-term stability of the drain current (±2%) favorably in the whole range under inves-tigation (up to ∼1000 h). Metallic substrates are a viable solution toward highly reliable high-powerdevices and are beneficial to low power electronics as well, where the high integration density also callsfor efficient heat dissipation.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000405594100013
DO  - DOI:10.1016/j.apmt.2017.02.008
UR  - https://juser.fz-juelich.de/record/828150
ER  -