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@ARTICLE{Mikulics:828150,
      author       = {Mikulics, Martin and Kordoš, P. and Fox, A. and Kočan, M.
                      and Lüth, H. and Sofer, Z. and Hardtdegen, H.},
      title        = {{E}fficient heat dissipation in {A}l{G}a{N}/{G}a{N}
                      heterostructure grown on silver substrate},
      journal      = {Applied materials today},
      volume       = {7},
      issn         = {2352-9407},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2017-02120},
      pages        = {134 - 137},
      year         = {2017},
      abstract     = {In this paper, we present the investigation of AlGaN/GaN
                      heterostructures deposited on metallic/silversubstrates by a
                      novel “combined” two-step epitaxial procedure based on
                      metalorganic vapor phase epi-taxy (MOVPE) and molecular beam
                      epitaxy (MBE). The channel temperature was determined by
                      highlateral and spectral resolution Raman spectroscopy. The
                      characteristics of the structures were comparedto those of
                      conventional AlGaN/GaN layers deposited on sapphire. An
                      improved heat dissipation in themetal substrate based HFETs
                      leads to a significant decrease in channel temperature
                      $(−60\%$ at 7 W/mm)and affects the long-term stability of
                      the drain current $(±2\%)$ favorably in the whole range
                      under inves-tigation (up to ∼1000 h). Metallic substrates
                      are a viable solution toward highly reliable
                      high-powerdevices and are beneficial to low power
                      electronics as well, where the high integration density also
                      callsfor efficient heat dissipation.},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000405594100013},
      doi          = {10.1016/j.apmt.2017.02.008},
      url          = {https://juser.fz-juelich.de/record/828150},
}