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| 001 | 828150 | ||
| 005 | 20210129230019.0 | ||
| 024 | 7 | _ | |a 10.1016/j.apmt.2017.02.008 |2 doi |
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| 037 | _ | _ | |a FZJ-2017-02120 |
| 100 | 1 | _ | |a Mikulics, Martin |0 P:(DE-Juel1)128613 |b 0 |u fzj |
| 245 | _ | _ | |a Efficient heat dissipation in AlGaN/GaN heterostructure grown on silver substrate |
| 260 | _ | _ | |a Amsterdam [u.a.] |c 2017 |b Elsevier |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a In this paper, we present the investigation of AlGaN/GaN heterostructures deposited on metallic/silversubstrates by a novel “combined” two-step epitaxial procedure based on metalorganic vapor phase epi-taxy (MOVPE) and molecular beam epitaxy (MBE). The channel temperature was determined by highlateral and spectral resolution Raman spectroscopy. The characteristics of the structures were comparedto those of conventional AlGaN/GaN layers deposited on sapphire. An improved heat dissipation in themetal substrate based HFETs leads to a significant decrease in channel temperature (−60% at 7 W/mm)and affects the long-term stability of the drain current (±2%) favorably in the whole range under inves-tigation (up to ∼1000 h). Metallic substrates are a viable solution toward highly reliable high-powerdevices and are beneficial to low power electronics as well, where the high integration density also callsfor efficient heat dissipation. |
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| 700 | 1 | _ | |a Kordoš, P. |0 P:(DE-HGF)0 |b 1 |
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| 700 | 1 | _ | |a Lüth, H. |0 P:(DE-Juel1)128608 |b 4 |u fzj |
| 700 | 1 | _ | |a Sofer, Z. |0 P:(DE-HGF)0 |b 5 |e Corresponding author |
| 700 | 1 | _ | |a Hardtdegen, H. |0 P:(DE-Juel1)125593 |b 6 |u fzj |
| 773 | _ | _ | |a 10.1016/j.apmt.2017.02.008 |g Vol. 7, p. 134 - 137 |0 PERI:(DE-600)2833442-5 |p 134 - 137 |t Applied materials today |v 7 |y 2017 |x 2352-9407 |
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