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@ARTICLE{Funck:828154,
      author       = {Funck, Carsten and Menzel, Stephan and Aslam, Nabeel and
                      Zhang, Hehe and Hardtdegen, Alexander and Waser, Rainer and
                      Hoffmann-Eifert, Susanne},
      title        = {{M}ultidimensional {S}imulation of {T}hreshold {S}witching
                      in {N}b{O}$_{2}$ {B}ased on an {E}lectric {F}ield
                      {T}riggered {T}hermal {R}unaway {M}odel},
      journal      = {Advanced electronic materials},
      volume       = {2},
      number       = {7},
      issn         = {2199-160X},
      address      = {Chichester},
      publisher    = {Wiley},
      reportid     = {FZJ-2017-02122},
      pages        = {1600169 -},
      year         = {2016},
      abstract     = {Volatile threshold switching devices have attracted great
                      attention for use as selectors in passive crossbar arrays.
                      These devices show an abrupt hysteretic jump in the
                      current–voltage characteristic and thus offer very high
                      selectivity. As this nonlinearity appears for either voltage
                      polarity, threshold switches are an ideal selector for
                      bipolar-switching redox-based resistive memories. To date,
                      the predominant explanation of the threshold-switching
                      phenomenon in NbO2 and related materials is the
                      insulator-to-metal transition that occurs at a certain
                      temperature and is connected to a phase transition. However,
                      some essential experimental findings are not satisfactorily
                      explained. Here, a multidimensional simulation of the
                      threshold switching in NbO2 is presented that overcomes
                      these shortcomings. The model is based on an electric
                      field-induced thermal runaway that increases the amount of
                      mobile charge carriers in the device. Applying this model in
                      a simulation correctly predicts the experimentally observed
                      threshold-type current–voltage characteristic, inclusive
                      of important features like the narrow opening of the
                      hysteresis and the magnitude of the current jump.
                      Furthermore, the simulation enables to discuss different
                      influencing parameters independently at spatial resolution.
                      The model is also applicable to a wider class of materials
                      showing the threshold switching, but does not show a
                      temperature-induced insulator-to-metal transition.},
      cin          = {PGI-7 / PGI-10 / JARA-FIT},
      ddc          = {621.3},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-10-20170113 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {524 - Controlling Collective States (POF3-524)},
      pid          = {G:(DE-HGF)POF3-524},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000379913000016},
      doi          = {10.1002/aelm.201600169},
      url          = {https://juser.fz-juelich.de/record/828154},
}