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@ARTICLE{Du:828184,
      author       = {Du, Hongchu and Jia, Chun-Lin and Koehl, Annemarie and
                      Barthel, Juri and Dittmann, Regina and Waser, Rainer and
                      Mayer, Joachim},
      title        = {{N}anosized {C}onducting {F}ilaments {F}ormed by
                      {A}tomic-{S}cale {D}efects in {R}edox-{B}ased {R}esistive
                      {S}witching {M}emories},
      journal      = {Chemistry of materials},
      volume       = {29},
      number       = {7},
      issn         = {1520-5002},
      address      = {Washington, DC},
      publisher    = {American Chemical Society},
      reportid     = {FZJ-2017-02152},
      pages        = {3164–3173},
      year         = {2017},
      abstract     = {Redox-based resistive switching phenomena are found in many
                      metal oxides and hold great promise for applications in
                      next-generation memories and neuromorphic computing systems.
                      Resistive switching involves the formation and disruption of
                      electrically conducting filaments through ion migration
                      accompanied by local electrochemical redox reactions. These
                      structural changes are often explained by point defects, but
                      so far clear experimental evidence of such defects is
                      missing. Here, nanosized conducting filaments in Fe-doped
                      SrTiO3 thin-film memories are visualized, for the first
                      time, by scanning transmission electron microscopy and
                      core-loss spectroscopy. Conducting filaments are identified
                      by a high local concentration of trivalent titanium ions
                      correlating to oxygen vacancies. Strontium vacancies and
                      lattice distortions also exist in the filaments. Despite a
                      high concentration of defects in the filaments, their
                      general SrTiO3 perovskite structure is essentially
                      preserved. First insights into the switching mechanism are
                      deduced from a snapshot simultaneously showing multiple
                      nanosized filaments in different evolutionary stages. The
                      coexistence of a high Ti3+ concentration along with Sr- and
                      O-vacancies in the conducting filaments provides atomic
                      scale explanations for the resistive switching mechanisms.
                      The results shed unique light on the complexity of the
                      conducting filament formation that cation and anion defects
                      need to be considered jointly.},
      cin          = {ER-C-2},
      ddc          = {540},
      cid          = {I:(DE-Juel1)ER-C-2-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000399264100063},
      doi          = {10.1021/acs.chemmater.7b00220},
      url          = {https://juser.fz-juelich.de/record/828184},
}