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020 _ _ |a 978-3-95806-185-9
024 7 _ |2 Handle
|a 2128/14037
024 7 _ |2 URN
|a urn:nbn:de:0001-2017032812
024 7 _ |2 ISSN
|a 1866-1807
037 _ _ |a FZJ-2017-02366
041 _ _ |a English
100 1 _ |0 P:(DE-Juel1)156302
|a Cai, Biya
|b 0
|e Corresponding author
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245 _ _ |a Manipulating the Structural and ElectronicProperties of Epitaxial NaNbO$_{3}$ Films via Strainand Stoichiometry
|f - 2017-03-28
260 _ _ |a Jülich
|b Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
|c 2016
300 _ _ |a VI, 114 S.
336 7 _ |2 DataCite
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336 7 _ |2 BibTeX
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|a Dissertation / PhD Thesis
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|s 1490680681_14620
336 7 _ |2 DRIVER
|a doctoralThesis
490 0 _ |a Schriften des Forschungszentrums Jülich. Reihe Schlüsseltechnologien / Key Technologies
|v 136
502 _ _ |a Universität Köln, Diss., 2016
|b Dr.
|c Universität Köln
|d 2016
520 _ _ |a Due to their intriguing dielectric, pyroelectric, elasto-electric, or opto-electric properties, oxide ferroelectrics are vital candidates for the fabrication of most electronics. However, these extraordinary properties exist mainly in the temperature regime around the ferroelectric phase transition, which is usually several hundreds of K away from room temperature. Therefore, the manipulation of oxide ferroelectrics, especially moving the ferroelectric transition towards room temperature, is of great interest for application and also basic research. In this thesis, we demonstrate this using examples of NaNbO$_{3}$ films. We show that the transition temperature of these films can be modified via plastic strain caused by epitaxial film growth on a structurally mismatched substrate, and this strain can be fixed by controlling the stoichiometry. The structural and electronic properties of Na$_{1+x}$NbO$_{3+δ}$ thin films are carefully examined byamong others XRD (e.g. RSM) and TEM and cryoelectronic measurements. Especially the electronic features are carefully analyzed via specially developed interdigitated electrodes in combination with integrated temperature sensor and heater. The electronic data are interpreted using existing as well as novel theories and models, they are proved to be closely correlated to the structural characteristics. The major results are:- Na$_{1+x}$NbO$_{3+δ}$ thin films can be grown epitaxially on (110)NdGaO$_{3}$ with a thickness up to 140nm (thicker films have not been studied). Plastic relaxation of the compressive strain sets in when the thickness of the film exceeds approximately 10 – 15 nm. Films with excess Na are mainly composed of NaNbO$_{3}$ with minor contribution of Na$_{3}$NbO$_{4}$. The latter phase seems to form nanoprecipitates that are homogeneously distributed in the NaNbO$_{3}$ film which helps to stabilize the film and reduce the relaxation of the strain. - For the nominally stoichiometric films, the compressive strain leads to a broad and frequency-dispersive phase transition at lower temperature (125 – 147 K). This could be either a new transition or a shift in temperature of a known transition. Considering the broadness and frequency dispersion of the transition, this is actually a transition from the dielectric state at high temperature to a relaxor-type ferroelectric state at low temperature. The latter is based on the formation of polar nano-regions (PNRs). Using the electric field dependence of the freezing temperature, allows a direct estimation of the volume (70 to270 nm$^{3}$) and diameter (5.2 to 8 nm, spherical approximation) of the PNRs. The values confirm with literature values which were measured by other technologies. [...]
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