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@ARTICLE{SchulteBraucks:828420,
      author       = {Schulte-Braucks, C. and Narimani, K. and Glass, S. and von
                      den Driesch, N. and Hartmann, J. M. and Ikonic, Z. and
                      Afanas’ev, V. V. and Zhao, Q. T. and Mantl, S. and Buca,
                      D.},
      title        = {{C}orrelation of {B}andgap {R}eduction with {I}nversion
                      {R}esponse in ({S}i){G}e{S}n/{H}igh-k/{M}etal {S}tacks},
      journal      = {ACS applied materials $\&$ interfaces},
      volume       = {9},
      number       = {10},
      issn         = {1944-8244},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2017-02381},
      pages        = {9102 - 9109},
      year         = {2017},
      abstract     = {The bandgap tunability of (Si)GeSn group IV semiconductors
                      opens a new era in Si-technology. Depending on the Si/Sn
                      contents, direct and indirect bandgaps in the range of
                      0.4–0.8 eV can be obtained, offering a broad spectrum of
                      both photonic and low power electronic applications. In this
                      work, we systematically studied capacitance–voltage
                      characteristics of high-k/metal gate stacks formed on GeSn
                      and SiGeSn alloys with Sn-contents ranging from 0 to 14 at.
                      $\%$ and Si-contents from 0 to 10 at. $\%$ particularly
                      focusing on the minority carrier inversion response. A clear
                      correlation between the Sn-induced shrinkage of the bandgap
                      energy and enhanced minority carrier response was confirmed
                      using temperature and frequency dependent capacitance
                      voltage-measurements, in good agreement with k.p theory
                      predictions and photoluminescence measurements of the
                      analyzed epilayers as reported earlier. The enhanced
                      minority generation rate for higher Sn-contents can be
                      firmly linked to the bandgap reduction in the GeSn epilayer
                      without significant influence of substrate/interface
                      effects. It thus offers a unique possibility to analyze
                      intrinsic defects in (Si)GeSn epilayers. The extracted
                      dominant defect level for minority carrier inversion lies
                      approximately 0.4 eV above the valence band edge in the
                      studied Sn-content range (0–12.5 at. $\%).$ This finding
                      is of critical importance since it shows that the presence
                      of Sn by itself does not impair the minority carrier
                      lifetime. Therefore, the continuous improvement of (Si)GeSn
                      material quality should yield longer nonradiative
                      recombination times which are required for the fabrication
                      of efficient light detectors and to obtain room temperature
                      lasing action.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521) / E2SWITCH - Energy Efficient Tunnel FET Switches
                      and Circuits (619509)},
      pid          = {G:(DE-HGF)POF3-521 / G:(EU-Grant)619509},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000396801200075},
      doi          = {10.1021/acsami.6b15279},
      url          = {https://juser.fz-juelich.de/record/828420},
}