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@ARTICLE{SchulteBraucks:828420,
author = {Schulte-Braucks, C. and Narimani, K. and Glass, S. and von
den Driesch, N. and Hartmann, J. M. and Ikonic, Z. and
Afanas’ev, V. V. and Zhao, Q. T. and Mantl, S. and Buca,
D.},
title = {{C}orrelation of {B}andgap {R}eduction with {I}nversion
{R}esponse in ({S}i){G}e{S}n/{H}igh-k/{M}etal {S}tacks},
journal = {ACS applied materials $\&$ interfaces},
volume = {9},
number = {10},
issn = {1944-8244},
address = {Washington, DC},
publisher = {Soc.},
reportid = {FZJ-2017-02381},
pages = {9102 - 9109},
year = {2017},
abstract = {The bandgap tunability of (Si)GeSn group IV semiconductors
opens a new era in Si-technology. Depending on the Si/Sn
contents, direct and indirect bandgaps in the range of
0.4–0.8 eV can be obtained, offering a broad spectrum of
both photonic and low power electronic applications. In this
work, we systematically studied capacitance–voltage
characteristics of high-k/metal gate stacks formed on GeSn
and SiGeSn alloys with Sn-contents ranging from 0 to 14 at.
$\%$ and Si-contents from 0 to 10 at. $\%$ particularly
focusing on the minority carrier inversion response. A clear
correlation between the Sn-induced shrinkage of the bandgap
energy and enhanced minority carrier response was confirmed
using temperature and frequency dependent capacitance
voltage-measurements, in good agreement with k.p theory
predictions and photoluminescence measurements of the
analyzed epilayers as reported earlier. The enhanced
minority generation rate for higher Sn-contents can be
firmly linked to the bandgap reduction in the GeSn epilayer
without significant influence of substrate/interface
effects. It thus offers a unique possibility to analyze
intrinsic defects in (Si)GeSn epilayers. The extracted
dominant defect level for minority carrier inversion lies
approximately 0.4 eV above the valence band edge in the
studied Sn-content range (0–12.5 at. $\%).$ This finding
is of critical importance since it shows that the presence
of Sn by itself does not impair the minority carrier
lifetime. Therefore, the continuous improvement of (Si)GeSn
material quality should yield longer nonradiative
recombination times which are required for the fabrication
of efficient light detectors and to obtain room temperature
lasing action.},
cin = {PGI-9 / JARA-FIT},
ddc = {540},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521) / E2SWITCH - Energy Efficient Tunnel FET Switches
and Circuits (619509)},
pid = {G:(DE-HGF)POF3-521 / G:(EU-Grant)619509},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000396801200075},
doi = {10.1021/acsami.6b15279},
url = {https://juser.fz-juelich.de/record/828420},
}