000828680 001__ 828680
000828680 005__ 20210129230133.0
000828680 0247_ $$2doi$$a10.1002/pssb.201600224
000828680 0247_ $$2ISSN$$a0031-8957
000828680 0247_ $$2ISSN$$a0370-1972
000828680 0247_ $$2WOS$$aWOS:000390339000003
000828680 0247_ $$2altmetric$$aaltmetric:21833243
000828680 037__ $$aFZJ-2017-02572
000828680 082__ $$a530
000828680 1001_ $$0P:(DE-HGF)0$$aWang, Zhenxing$$b0$$eCorresponding author
000828680 245__ $$aEncapsulated graphene-based Hall sensors on foil with increased sensitivity
000828680 260__ $$aWeinheim$$bWiley-VCH70889$$c2016
000828680 264_1 $$2Crossref$$3online$$bWiley$$c2016-06-06
000828680 264_1 $$2Crossref$$3print$$bWiley$$c2016-12-01
000828680 264_1 $$2Crossref$$3print$$bWiley$$c2016-12-01
000828680 3367_ $$2DRIVER$$aarticle
000828680 3367_ $$2DataCite$$aOutput Types/Journal article
000828680 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1491208756_25427
000828680 3367_ $$2BibTeX$$aARTICLE
000828680 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000828680 3367_ $$00$$2EndNote$$aJournal Article
000828680 520__ $$aThe encapsulation of graphene-based Hall sensors on foil is shown to be an effective method for improving the performance in terms of higher sensitivity for magnetic field detection. Two types of encapsulation were investigated: a simple encapsulation of graphene with polymethyl methacrylate (PMMA) as a proof of concept and an encapsulation with mechanically exfoliated hexagonal boron nitride (hBN). The Hall sensor with PMMA encapsulation already shows higher sensitivity compared to the one without encapsulation. However, the Hall sensor with graphene encapsulated between two stacks of hBN shows a current and a voltage normalized sensitivity of up to 2270 V/AT and 0.68 V/VT, respectively, which are the highest reported sensitivity values for Hall sensors on foil so far.
000828680 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000828680 542__ $$2Crossref$$i2015-09-01$$uhttp://doi.wiley.com/10.1002/tdm_license_1.1
000828680 588__ $$aDataset connected to CrossRef
000828680 7001_ $$0P:(DE-HGF)0$$aBanszerus, Luca$$b1
000828680 7001_ $$0P:(DE-HGF)0$$aOtto, Martin$$b2
000828680 7001_ $$0P:(DE-HGF)0$$aWatanabe, Kenji$$b3
000828680 7001_ $$0P:(DE-HGF)0$$aTaniguchi, Takashi$$b4
000828680 7001_ $$0P:(DE-Juel1)142024$$aStampfer, Christoph$$b5
000828680 7001_ $$0P:(DE-HGF)0$$aNeumaier, Daniel$$b6
000828680 77318 $$2Crossref$$3journal-article$$a10.1002/pssb.201600224$$b : Wiley, 2016-06-06$$n12$$p2316-2320$$tphysica status solidi (b)$$v253$$x0370-1972$$y2016
000828680 773__ $$0PERI:(DE-600)1481096-7$$a10.1002/pssb.201600224$$gVol. 253, no. 12, p. 2316 - 2320$$n12$$p2316-2320$$tPhysica status solidi / B$$v253$$x0370-1972$$y2016
000828680 8564_ $$uhttps://juser.fz-juelich.de/record/828680/files/Wang_et_al-2016-physica_status_solidi_%28b%29.pdf$$yRestricted
000828680 8564_ $$uhttps://juser.fz-juelich.de/record/828680/files/Wang_et_al-2016-physica_status_solidi_%28b%29.gif?subformat=icon$$xicon$$yRestricted
000828680 8564_ $$uhttps://juser.fz-juelich.de/record/828680/files/Wang_et_al-2016-physica_status_solidi_%28b%29.jpg?subformat=icon-1440$$xicon-1440$$yRestricted
000828680 8564_ $$uhttps://juser.fz-juelich.de/record/828680/files/Wang_et_al-2016-physica_status_solidi_%28b%29.jpg?subformat=icon-180$$xicon-180$$yRestricted
000828680 8564_ $$uhttps://juser.fz-juelich.de/record/828680/files/Wang_et_al-2016-physica_status_solidi_%28b%29.jpg?subformat=icon-640$$xicon-640$$yRestricted
000828680 8564_ $$uhttps://juser.fz-juelich.de/record/828680/files/Wang_et_al-2016-physica_status_solidi_%28b%29.pdf?subformat=pdfa$$xpdfa$$yRestricted
000828680 909CO $$ooai:juser.fz-juelich.de:828680$$pVDB
000828680 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-HGF)0$$aForschungszentrum Jülich$$b5$$kFZJ
000828680 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000828680 9141_ $$y2017
000828680 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000828680 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bPHYS STATUS SOLIDI B : 2015
000828680 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000828680 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000828680 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000828680 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000828680 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000828680 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000828680 920__ $$lyes
000828680 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000828680 980__ $$ajournal
000828680 980__ $$aVDB
000828680 980__ $$aI:(DE-Juel1)PGI-9-20110106
000828680 980__ $$aUNRESTRICTED