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@ARTICLE{Verbiest:828681,
author = {Verbiest, G. J. and Stampfer, Christoph and Huber, S. E.
and Andersen, M. and Reuter, K.},
title = {{I}nterplay between nanometer-scale strain variations and
externally applied strain in graphene},
journal = {Physical review / B},
volume = {93},
number = {19},
issn = {2469-9950},
address = {Woodbury, NY},
publisher = {Inst.},
reportid = {FZJ-2017-02573},
pages = {195438},
year = {2016},
abstract = {We present a molecular modeling study analyzing
nanometer-scale strain variations in graphene as a function
of externally applied tensile strain. We consider two
different mechanisms that could underlie nanometer-scale
strain variations: static perturbations from lattice
imperfections of an underlying substrate and thermal
fluctuations. For both cases we observe a decrease in the
out-of-plane atomic displacements with increasing strain,
which is accompanied by an increase in the in-plane
displacements. Reflecting the nonlinear elastic properties
of graphene, both trends together yield a nonmonotonic
variation of the total displacements with increasing tensile
strain. This variation allows us to test the role of
nanometer-scale strain variations in limiting the carrier
mobility of high-quality graphene samples.},
cin = {PGI-9 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000376637700004},
doi = {10.1103/PhysRevB.93.195438},
url = {https://juser.fz-juelich.de/record/828681},
}