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@ARTICLE{Drgeler:828683,
      author       = {Drögeler, Marc and Franzen, Christopher and Volmer, Frank
                      and Pohlmann, Tobias and Banszerus, Luca and Wolter, Maik
                      and Watanabe, Kenji and Taniguchi, Takashi and Stampfer,
                      Christoph and Beschoten, Bernd},
      title        = {{S}pin {L}ifetimes {E}xceeding 12 ns in {G}raphene
                      {N}onlocal {S}pin {V}alve {D}evices},
      journal      = {Nano letters},
      volume       = {16},
      number       = {6},
      issn         = {1530-6992},
      address      = {Washington, DC},
      publisher    = {ACS Publ.},
      reportid     = {FZJ-2017-02575},
      pages        = {3533 - 3539},
      year         = {2016},
      abstract     = {We show spin lifetimes of 12.6 ns and spin diffusion
                      lengths as long as 30.5 μm in single layer graphene
                      nonlocal spin transport devices at room temperature. This is
                      accomplished by the fabrication of Co/MgO-electrodes on a
                      Si/SiO2 substrate and the subsequent dry transfer of a
                      graphene-hBN-stack on top of this electrode structure where
                      a large hBN flake is needed in order to diminish the ingress
                      of solvents along the hBN-to-substrate interface.
                      Interestingly, long spin lifetimes are observed despite the
                      fact that both conductive scanning force microscopy and
                      contact resistance measurements reveal the existence of
                      conducting pinholes throughout the MgO spin
                      injection/detection barriers. Compared to previous devices,
                      we observe an enhancement of the spin lifetime in single
                      layer graphene by a factor of 6. We demonstrate that the
                      spin lifetime does not depend on the contact resistance area
                      products when comparing all bottom-up devices indicating
                      that spin absorption at the contacts is not the predominant
                      source for spin dephasing.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {522 - Controlling Spin-Based Phenomena (POF3-522)},
      pid          = {G:(DE-HGF)POF3-522},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000377642700018},
      pubmed       = {pmid:27210240},
      doi          = {10.1021/acs.nanolett.6b00497},
      url          = {https://juser.fz-juelich.de/record/828683},
}