TY  - JOUR
AU  - Stampfer, Christoph
AU  - Reichardt, Sven
TI  - Correspondence: On the nature of strong piezoelectricity in graphene on SiO$_{2}$
JO  - Nature Communications
VL  - 7
SN  - 2041-1723
CY  - London
PB  - Nature Publishing Group
M1  - FZJ-2017-02578
SP  - 11570 -
PY  - 2016
AB  - Spatially resolved Raman spectroscopy and piezoresponse force microscopy are very interesting and useful tools for investigating properties of graphene and other two-dimensional materials. In a recent article published in Nature Communications, da Cunha Rodrigues et al.1 used both methods to investigate single-layer graphene deposited on SiO2 grating substrates. Interestingly, the authors report on strong piezoelectricity and on high in-plane strain values of 3–5% in the supported graphene regions. It is argued that the in-plane strain originates from the strong interaction of the carbon atoms with the oxygen atoms of the SiO2 substrate. Their finding of high in-plane strain is crucial, as it is considered to be of the same origin as the observed strong piezoelectricity in graphene on SiO2. Unfortunately however, a major correction is needed. The strain values reported by da Cunha Rodrigues et al. appear to be more than a factor 50 too large, that is, the actual strain in their investigated samples is only on the order of 0.06–0.10% or lower.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000375939200001
DO  - DOI:10.1038/ncomms11570
UR  - https://juser.fz-juelich.de/record/828686
ER  -