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@ARTICLE{Stampfer:828686,
author = {Stampfer, Christoph and Reichardt, Sven},
title = {{C}orrespondence: {O}n the nature of strong
piezoelectricity in graphene on {S}i{O}$_{2}$},
journal = {Nature Communications},
volume = {7},
issn = {2041-1723},
address = {London},
publisher = {Nature Publishing Group},
reportid = {FZJ-2017-02578},
pages = {11570 -},
year = {2016},
abstract = {Spatially resolved Raman spectroscopy and piezoresponse
force microscopy are very interesting and useful tools for
investigating properties of graphene and other
two-dimensional materials. In a recent article published in
Nature Communications, da Cunha Rodrigues et al.1 used both
methods to investigate single-layer graphene deposited on
SiO2 grating substrates. Interestingly, the authors report
on strong piezoelectricity and on high in-plane strain
values of $3–5\%$ in the supported graphene regions. It is
argued that the in-plane strain originates from the strong
interaction of the carbon atoms with the oxygen atoms of the
SiO2 substrate. Their finding of high in-plane strain is
crucial, as it is considered to be of the same origin as the
observed strong piezoelectricity in graphene on SiO2.
Unfortunately however, a major correction is needed. The
strain values reported by da Cunha Rodrigues et al. appear
to be more than a factor 50 too large, that is, the actual
strain in their investigated samples is only on the order of
$0.06–0.10\%$ or lower.},
cin = {PGI-9 / JARA-FIT},
ddc = {500},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000375939200001},
doi = {10.1038/ncomms11570},
url = {https://juser.fz-juelich.de/record/828686},
}