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000828688 1001_ $$0P:(DE-HGF)0$$aBanszerus, Luca$$b0
000828688 245__ $$aBallistic Transport Exceeding 28 μm in CVD Grown Graphene
000828688 260__ $$aWashington, DC$$bACS Publ.$$c2016
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000828688 520__ $$aWe report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm2/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature-dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 μm up to 200 K.
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000828688 7001_ $$0P:(DE-HGF)0$$aSchmitz, Michael$$b1
000828688 7001_ $$0P:(DE-HGF)0$$aEngels, Stephan$$b2
000828688 7001_ $$0P:(DE-Juel1)165946$$aGoldsche, Matthias$$b3
000828688 7001_ $$0P:(DE-HGF)0$$aWatanabe, Kenji$$b4
000828688 7001_ $$0P:(DE-HGF)0$$aTaniguchi, Takashi$$b5
000828688 7001_ $$0P:(DE-HGF)0$$aBeschoten, Bernd$$b6
000828688 7001_ $$0P:(DE-Juel1)142024$$aStampfer, Christoph$$b7$$eCorresponding author
000828688 773__ $$0PERI:(DE-600)2048866-X$$a10.1021/acs.nanolett.5b04840$$gVol. 16, no. 2, p. 1387 - 1391$$n2$$p1387 - 1391$$tNano letters$$v16$$x1530-6992$$y2016
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