TY  - JOUR
AU  - Banszerus, Luca
AU  - Schmitz, Michael
AU  - Engels, Stephan
AU  - Goldsche, Matthias
AU  - Watanabe, Kenji
AU  - Taniguchi, Takashi
AU  - Beschoten, Bernd
AU  - Stampfer, Christoph
TI  - Ballistic Transport Exceeding 28 μm in CVD Grown Graphene
JO  - Nano letters
VL  - 16
IS  - 2
SN  - 1530-6992
CY  - Washington, DC
PB  - ACS Publ.
M1  - FZJ-2017-02580
SP  - 1387 - 1391
PY  - 2016
AB  - We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm2/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature-dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 μm up to 200 K.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000370215200083
C6  - pmid:26761190
DO  - DOI:10.1021/acs.nanolett.5b04840
UR  - https://juser.fz-juelich.de/record/828688
ER  -