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@ARTICLE{Banszerus:828688,
author = {Banszerus, Luca and Schmitz, Michael and Engels, Stephan
and Goldsche, Matthias and Watanabe, Kenji and Taniguchi,
Takashi and Beschoten, Bernd and Stampfer, Christoph},
title = {{B}allistic {T}ransport {E}xceeding 28 μm in {CVD} {G}rown
{G}raphene},
journal = {Nano letters},
volume = {16},
number = {2},
issn = {1530-6992},
address = {Washington, DC},
publisher = {ACS Publ.},
reportid = {FZJ-2017-02580},
pages = {1387 - 1391},
year = {2016},
abstract = {We report on ballistic transport over more than 28 μm in
graphene grown by chemical vapor deposition (CVD) that is
fully encapsulated in hexagonal boron nitride. The
structures are fabricated by an advanced dry van-der-Waals
transfer method and exhibit carrier mobilities of up to
three million cm2/(Vs). The ballistic nature of charge
transport is probed by measuring the bend resistance in
cross- and square-shaped devices. Temperature-dependent
measurements furthermore prove that ballistic transport is
maintained exceeding 1 μm up to 200 K.},
cin = {PGI-9 / JARA-FIT},
ddc = {540},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000370215200083},
pubmed = {pmid:26761190},
doi = {10.1021/acs.nanolett.5b04840},
url = {https://juser.fz-juelich.de/record/828688},
}