TY  - JOUR
AU  - Sydoruk, Viktor
AU  - Zadorozhnyi, Ihor
AU  - Hardtdegen, Hilde
AU  - Lüth, Hans
AU  - Petrychuk, Michael
AU  - Naumov, A. V.
AU  - Korotyeyev, V. V.
AU  - Kochelap, V. A.
AU  - Belyaev, A. E.
AU  - Vitusevich, Svetlana
TI  - Electronic edge-state and space-charge phenomena in long GaN nanowires and nanoribbonsPGI
JO  - Nanotechnology
VL  - 28
IS  - 13
SN  - 1361-6528
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2017-02929
SP  - 135204 (11pp)
PY  - 2017
AB  - We studied space-charge-distribution phenomena in planar GaN nanowires and nanoribbons (NRs). The results obtained at low voltages demonstrate that the electron concentration changes not only at the edges of the NR, but also in the middle part of the NR. The effect is stronger with decreasing NR width. Moreover, the spatial separation of the positive and negative charges results in electric-field patterns outside the NR. This remarkable feature of electrostatic fields outside the NR may be even stronger in 2D material structures. For larger voltages the space-charge-limited current (SCLC) effect determines the main mechanism of transport in the NR samples. The onset of the SCLC effect clearly correlates with the NR width. The results are confirmed by noise spectroscopy studies of the NR transport. We found that the noise increases with decreasing NR width and the shape of the spectra changes with voltage increase with a tendency toward slope (3/2), reflecting diffusion processes due to the SCLC effect. At higher voltages noise decreases as a result of changes in the scattering mechanisms. We suggest that the features of the electric current and noise found in the NRs are of general character and will have an impact on the development of NR-based devices.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000395938500004
DO  - DOI:10.1088/1361-6528/aa5de3
UR  - https://juser.fz-juelich.de/record/829119
ER  -