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@ARTICLE{Sydoruk:829119,
      author       = {Sydoruk, Viktor and Zadorozhnyi, Ihor and Hardtdegen, Hilde
                      and Lüth, Hans and Petrychuk, Michael and Naumov, A. V. and
                      Korotyeyev, V. V. and Kochelap, V. A. and Belyaev, A. E. and
                      Vitusevich, Svetlana},
      title        = {{E}lectronic edge-state and space-charge phenomena in long
                      {G}a{N} nanowires and nanoribbons{PGI}},
      journal      = {Nanotechnology},
      volume       = {28},
      number       = {13},
      issn         = {1361-6528},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2017-02929},
      pages        = {135204 (11pp)},
      year         = {2017},
      abstract     = {We studied space-charge-distribution phenomena in planar
                      GaN nanowires and nanoribbons (NRs). The results obtained at
                      low voltages demonstrate that the electron concentration
                      changes not only at the edges of the NR, but also in the
                      middle part of the NR. The effect is stronger with
                      decreasing NR width. Moreover, the spatial separation of the
                      positive and negative charges results in electric-field
                      patterns outside the NR. This remarkable feature of
                      electrostatic fields outside the NR may be even stronger in
                      2D material structures. For larger voltages the
                      space-charge-limited current (SCLC) effect determines the
                      main mechanism of transport in the NR samples. The onset of
                      the SCLC effect clearly correlates with the NR width. The
                      results are confirmed by noise spectroscopy studies of the
                      NR transport. We found that the noise increases with
                      decreasing NR width and the shape of the spectra changes
                      with voltage increase with a tendency toward slope (3/2),
                      reflecting diffusion processes due to the SCLC effect. At
                      higher voltages noise decreases as a result of changes in
                      the scattering mechanisms. We suggest that the features of
                      the electric current and noise found in the NRs are of
                      general character and will have an impact on the development
                      of NR-based devices.},
      cin          = {PGI-8 / ICS-8 / JARA-FIT / PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-8-20110106 / I:(DE-Juel1)ICS-8-20110106 /
                      $I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
      pid          = {G:(DE-HGF)POF3-523},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000395938500004},
      doi          = {10.1088/1361-6528/aa5de3},
      url          = {https://juser.fz-juelich.de/record/829119},
}