% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@PHDTHESIS{Junker:829125,
author = {Junker, Hubertus Hartmut Robert},
title = {{L}adungstransportmessung an {G}a{A}s-{N}anodrähten und
{E}ntwicklung eines
{T}ieftemperatur-{V}ierspitzen-{R}astertunnelmikroskops{C}harge
transport measurements at {G}a{A}s-nanowires and development
of a low-temperature four-tip scanning tunneling
microscope-3},
school = {RWTH Aachen University},
type = {Dr.},
address = {Aachen},
publisher = {RWTH Aachen University},
reportid = {FZJ-2017-02932},
pages = {179pp; XXIII Seiten},
year = {2016},
note = {RWTH Aachen University, Diss., 2016},
abstract = {In order to perform charge transport measurements on
freestanding as-grown GaAs nanowires, a room-temperature
multi-tip scanning tunneling microscope was utilized as a
nanoprober. Four-point resistance measurements along
individual nanowires were performed with high spatial
resolution. Subsequently, three different samples, grown
with different temperature patterns, were investigated.
Detailed resistance profiles along several nanowires on each
sample were recorded. Three different regions were
identified in the resistance profiles: A high resistance
region at the nanowire bases (resulting from a suppressed
dopant incorporation), a transition region in the middle
with higher resistance and a low resistance region at the
nanowire tops, with a desired amount of dopant
incorporation.A calculation of the size of the depleted zone
revealed that nanowires were completely depleted in the high
resistance segments. Only in the low resistance region, the
current could ow through the conduction channel in the
nanowire core. In the high resistance region, the current
was owing through surface states. In the transition region,
the measured four-point IVs showed a non-linear
characteristic. At high biases, the current could transfer
from the surface to the better conducting core, while for
low biases, the current had to ow via the surface. During
the resistance profling, electron beam induced currents were
present in the transition region as well as around the
nanowire base on the substrate. A new customized
low-temperature ultra-high vacuum four-tip scanning
tunneling microscope capable of charge and magneto transport
measurements has been realized to carry out charge transport
measurements on semiconductor nanowires at liquid helium
temperature. In order to navigate the four STM tips to
desired positions, an SEM was used. SEM images of a test
sample were used to optimize the vibration isolation of the
experiment. A new nanopositioner (KoalaDrive) was developed
to approach the tips to the sample. It could be shown that
the KoalaDrive is capable of performing at low temperature
(5 K), in ultra-high vacuum with high precision. In images
taken with this STM, atomic steps on graphite as well as the
525 reconstruction of the Pt(100) surface could be resolved.
The low-temperature multi-tip scanning tunneling microscope
was used to contact single as-grown GaAs nanowires with one
tip. Charging of a part of the tip holders prevented SEM
images and conduction measurements with more tips.},
cin = {PGI-3},
cid = {I:(DE-Juel1)PGI-3-20110106},
pnm = {141 - Controlling Electron Charge-Based Phenomena
(POF3-141)},
pid = {G:(DE-HGF)POF3-141},
typ = {PUB:(DE-HGF)11},
urn = {urn:nbn:de:hbz:82-rwth-2016-119506},
doi = {10.18154/RWTH-2016-11950},
url = {https://juser.fz-juelich.de/record/829125},
}