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@ARTICLE{Otrokov:829643,
      author       = {Otrokov, Mikhail M and Menshchikova, Tatiana and Vergniory,
                      Maia and Rusinov, Igor and Vyazovskaya, Alexandra and
                      Koroteev, Yury and Bihlmayer, Gustav and Ernst, Arthur and
                      Echenique, Pedro and Arnau, Andres and Chulkov, Evgeny},
      title        = {{H}ighly-ordered wide bandgap materials for quantized
                      anomalous {H}all and magnetoelectric effects},
      journal      = {2D Materials},
      volume       = {4},
      number       = {2},
      issn         = {2053-1583},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2017-03312},
      pages        = {025082},
      year         = {2017},
      abstract     = {An interplay of spin–orbit coupling and intrinsic
                      magnetism is known to give rise to the quantum anomalous
                      Hall and topological magnetoelectric effects under certain
                      conditions. Their realization could open access to low power
                      consumption electronics as well as many fundamental
                      phenomena like image magnetic monopoles, Majorana fermions
                      and others. Unfortunately, being realized very recently,
                      these effects are only accessible at extremely low
                      temperatures and the lack of appropriate materials that
                      would enable the temperature increase is a most severe
                      challenge. Here, we propose a novel material platform with
                      unique combination of properties making it perfectly
                      suitable for the realization of both effects at elevated
                      temperatures. The key element of the computational material
                      design is an extension of a topological insulator (TI)
                      surface by a thin film of ferromagnetic insulator, which is
                      both structurally and compositionally compatible with the
                      TI. Following this proposal we suggest a variety of specific
                      systems and discuss their numerous advantages, in particular
                      wide band gaps with the Fermi level located in the gap.},
      cin          = {PGI-1 / IAS-1 / JARA-FIT / JARA-HPC},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-1-20110106 / I:(DE-Juel1)IAS-1-20090406 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
      pnm          = {142 - Controlling Spin-Based Phenomena (POF3-142)},
      pid          = {G:(DE-HGF)POF3-142},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000400267800006},
      doi          = {10.1088/2053-1583/aa6bec},
      url          = {https://juser.fz-juelich.de/record/829643},
}