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@ARTICLE{Lpke:829655,
      author       = {Lüpke, Felix and Eschbach, Markus and Heider, Tristan and
                      Lanius, Martin and Schüffelgen, Peter and Rosenbach, Daniel
                      and von den Driesch, Nils and Cherepanov, Vasily and
                      Mussler, Gregor and Plucinski, Lukasz and Grützmacher,
                      Detlev and Schneider, Claus Michael and Voigtländer, Bert},
      title        = {{E}lectrical resistance of individual defects on a
                      topological insulator surface},
      journal      = {Nature Communications},
      volume       = {},
      issn         = {2041-1723},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2017-03316},
      pages        = {15704},
      year         = {2017},
      abstract     = {Three-dimensional topological insulators host surface
                      states with linear dispersion, which manifest as a Dirac
                      cone. Nanoscale transport measurements provide direct access
                      to the transport properties of the Dirac cone in real space
                      and allow the detailed investigation of charge carrier
                      scattering. Here we use scanning tunnelling potentiometry to
                      analyse the resistance of different kinds of defects at the
                      surface of a (Bi0.53Sb0.47)2Te3 topological insulator thin
                      film. We find the largest localized voltage drop to be
                      located at domain boundaries in the topological insulator
                      film, with a resistivity about four times higher than that
                      of a step edge. Furthermore, we resolve resistivity dipoles
                      located around nanoscale voids in the sample surface. The
                      influence of such defects on the resistance of the
                      topological surface state is analysed by means of a resistor
                      network model. The effect resulting from the voids is found
                      to be small compared with the other defects.},
      cin          = {PGI-3},
      ddc          = {500},
      cid          = {I:(DE-Juel1)PGI-3-20110106},
      pnm          = {141 - Controlling Electron Charge-Based Phenomena
                      (POF3-141)},
      pid          = {G:(DE-HGF)POF3-141},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000403064600001},
      pubmed       = {pmid:28604672},
      doi          = {10.1038/ncomms15704},
      url          = {https://juser.fz-juelich.de/record/829655},
}