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@PHDTHESIS{Bornhfft:829763,
author = {Bornhöfft, Manuel},
title = {{TEM}/{STEM} {I}nvestigations of {P}hase {C}hange
{M}aterials for {N}on-volatile {M}emory {A}pplications},
volume = {47},
school = {RWTH Aachen},
type = {Dr.},
address = {Jülich},
publisher = {Forschungszentrum Jülich GmbH Zentralbibliothek Verlag},
reportid = {FZJ-2017-03397},
isbn = {978-3-95806-221-4},
series = {Schriften des Forschungszentrums Jülich. Reihe Information
/ Information},
pages = {viii, 135 S.},
year = {2017},
note = {RWTH Aachen, Diss., 2017},
abstract = {Phase change materials are very interesting for future
information technology because of their possibility to
encode information in the readable difference of physical
properties between the crystalline and the amorphous phase.
Phase change materials are the dominant non-volatile memory
material used in rewritable optical memory. This includes
the current state of the art Blue-ray disc. Mobile computer
platforms like smart mobile phones, tablets and netbooks are
in need of energy and space efficient memory. Optical or
magnetic recording media do not meet these needs anymore.
Phase change materials used as non-volatile electronic
memories are promising candidates as competition for flash
memory. Flash memory is the current state of the art
electronic non-volatile memory. In addition, non-volatile
electronic applications as competition to Dynamic Random
Access Memory (DRAM) are possible because of the high
switching speeds of phase change materials. The key to the
successful application of phase change materials as
electronic non-volatile memory is the understanding of their
physical properties and especially their switching kinetics.
In the present work, transmission electron microscopy (TEM)
and scanning transmission electron microscopy (STEM) were
used in a systematic manner to investigate the properties of
a variety of phase change materials. The crystal growth
velocities of grains growing in 30 nm thick amorphous layers
of the phase change materials
Ag$_{4}$In$_{3}$Sb$_{67}$Te$_{26}$ (AIST) and GeTe were
measured directly by TEM bright field imaging. Grains of the
measured materials were grown in a matrix of the amorphous
phase by ex situ heating. This is done for sputtered as
deposited material and material molten by laser which is
quenched to room temperature. Furthermore we investigated
lamellas of as deposited and melt quenched AIST and GeTe by
fluctuation electron microscopy (FEM). The comparison of
growth velocity and FEM data reveals that increasing medium
range order (MRO) leads to a decrease in growth velocity.
This is also related to different glassy states of the phase
change materials. [...]},
cin = {PGI-5},
cid = {I:(DE-Juel1)PGI-5-20110106},
pnm = {899 - ohne Topic (POF3-899)},
pid = {G:(DE-HGF)POF3-899},
typ = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
url = {https://juser.fz-juelich.de/record/829763},
}