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@ARTICLE{Degtyarev:829764,
      author       = {Degtyarev, V. E. and Khazanova, S. V. and Demarina,
                      Nataliya},
      title        = {{F}eatures of electron gas in {I}n{A}s nanowires imposed by
                      interplay between nanowire geometry, doping and surface
                      states},
      journal      = {Scientific reports},
      volume       = {7},
      number       = {1},
      issn         = {2045-2322},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2017-03398},
      pages        = {3411},
      year         = {2017},
      abstract     = {We present a study of electron gas properties in InAs
                      nanowires determined by interaction between nanowire
                      geometry, doping and surface states. The electron gas
                      density and space distribution are calculated via
                      self-consistent solution of coupled Schroedinger and Poisson
                      equations in the nanowires with a hexagonal cross-section.
                      We show that the density of surface states and the nanowire
                      width define the spatial distribution of the electrons.
                      Three configurations can be distinguished, namely the
                      electrons are localized in the center of the wire, or they
                      are arranged in a uniform tubular distribution, or finally
                      in a tubular distribution with additional electron
                      accumulation at the corners of the nanowire. The latter one
                      is dominating for most experimentally obtained nanowires.
                      N-type doping partly suppresses electron accumulation at the
                      nanowire corners. The electron density calculated for both,
                      various nanowire widths and different positions of the Fermi
                      level at the nanowire surface, is compared with the
                      experimental data for intrinsic InAs nanowires. Suitable
                      agreement is obtained by assuming a Fermi level pinning at
                      60 to 100 meV above the conduction band edge, leading to a
                      tubular electron distribution with accumulation along the
                      corners of the nanowire.},
      cin          = {PGI-2},
      ddc          = {000},
      cid          = {I:(DE-Juel1)PGI-2-20110106},
      pnm          = {141 - Controlling Electron Charge-Based Phenomena
                      (POF3-141)},
      pid          = {G:(DE-HGF)POF3-141},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:28611438},
      UT           = {WOS:000403140000082},
      doi          = {10.1038/s41598-017-03415-3},
      url          = {https://juser.fz-juelich.de/record/829764},
}