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@PHDTHESIS{Portz:829939,
      author       = {Portz, Verena},
      title        = {{I}nvestigation of ternary nitride semiconductor alloys by
                      scanning tunneling microscopy},
      volume       = {48},
      school       = {RWTH Aachen},
      type         = {Dissertation},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2017-03543},
      isbn         = {978-3-95806-232-0},
      series       = {Schriften des Forschungszentrums Jülich. Reihe Information
                      / Information},
      pages        = {140 S.},
      year         = {2017},
      note         = {Dissertation, RWTH Aachen, 2017},
      abstract     = {In this thesis different lattice-matched
                      Al$_{1-x}$In$_{x}$N/GaN heterostructures were investigated
                      with the aim to deduce strain, compositional fluctuations,
                      defects, and electronic properties on cross-sectional
                      $\textit{m}$-plane Al$_{1-x}$In$_{x}$N cleavage surfaces.
                      The electronic properties of
                      Al$_{1-x}$In$_{x}$N($10\overline{1}$0) surfaces were
                      investigated by cross-sectional scanning tunneling
                      spectroscopy in combination with density functional theory
                      calculations. The calculations revealed empty Al and/or
                      In-derived dangling bond states at the surface, which were
                      calculated to be within the fundamental bulk band gap for In
                      contents smaller than 60\%. For In contents of ${x}$ = 0.19
                      and ${x}$ = 0.20, the energy of the lowest empty In-derived
                      surface state was extracted from tunnel spectra acquired on
                      Al$_{1-x}$In$_{x}$N($10\overline{1}0$) cleavage surfaces to
                      be E$_{C}$ - 1-82 $\pm$ 0.41 eV and E$_{C}$ - 1.80 $\pm$
                      0.56 eV, respectively, in good agreement with the calculated
                      energies. In addition, a polarity dependent Fermi-level
                      pinning of the surface state was identified. Based on these
                      results it was concluded, that under growth conditions the
                      Fermi level is pinned by the In-derived dangling bond state
                      for In contents smaller than about 60\%. For larger In
                      contents no Fermi level pinning is present. In order to fit
                      simulations to the experimentally obtained tunnel spectra,
                      an average value of the electron affinity $_{\chi AllnN}$ of
                      3.5 $\pm$ 0.1 eV was necessary. A thorough literature survey
                      of theoretically and experimentally obtained values of the
                      electron affinities of GaN, AlN, and InN revealed two
                      issues. First, a broad range of values was reported for the
                      electron affinities with deviations of more than 50\%.
                      Second, [...]},
      cin          = {PGI-5},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
      url          = {https://juser.fz-juelich.de/record/829939},
}